HN2D02FUTW1T1 ON Semiconductor, HN2D02FUTW1T1 Datasheet
HN2D02FUTW1T1
Specifications of HN2D02FUTW1T1
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HN2D02FUTW1T1 Summary of contents
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... These devices are housed in the SC−88 package which is designed for low power surface mount applications. Fast t , < 3 Low C , < 2 Available Tape and Reel Use HN2D02FUTW1T1 to order the 7 inch/3000 unit reel. MAXIMUM RATINGS ( Rating Reverse Voltage Reverse Voltage Peak Reverse Voltage Peak Reverse Voltage ...
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... ELECTRICAL CHARACTERISTICS Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time (Figure Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT A Figure 1. Reverse Recovery Time Equivalent Test Circuit HN2D02FUTW1T1 ( Symbol Condition 100 100 1.0 MHz (Note mA 100 W, I ...
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... 1 − 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 0.68 0.64 0.60 0.56 0.52 0 HN2D02FUTW1T1 10 1.0 0 0.01 0.001 1.0 1 REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance http://onsemi.com 150 125 REVERSE VOLTAGE (VOLTS) R Figure 3. Leakage Current 8 50 ...
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... J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. HN2D02FUTW1T1/D ...