MBR6045WT ON Semiconductor, MBR6045WT Datasheet

DIODE SCHOTTKY 45V 30A TO247

MBR6045WT

Manufacturer Part Number
MBR6045WT
Description
DIODE SCHOTTKY 45V 30A TO247
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBR6045WT

Voltage - Forward (vf) (max) @ If
620mV @ 30A
Current - Reverse Leakage @ Vr
1mA @ 45V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
45V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Other names
MBR6045WTOS

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MBR6045WT
SWITCHMODEt
Power Rectifier
Schottky Barrier principle with a Platinum barrier metal.
Features
Mechanical Characteristics
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 9
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current,
(Rated V
20 kHz, T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
Voltage Rate of Change
The SWITCHMODE power rectifier employs the use of the
Parallel Operation at Full Rating
Leads are Readily Solderable
260°C Max. for 10 Seconds
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
45 V Blocking Voltage
Low Forward Voltage Drop
Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns)
175°C Operating Junction Temperature
Pb−Free Package is Available*
Case: Epoxy, Molded
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Junction−to−Ambient: dP
R
R
C
, T
, Square Wave,
= 90°C)
C
= 125°C)
Rating
D
/dT
Per Diode
Per Device
Per Diode
J
< 1/R
qJA
.
Symbol
V
V
I
T
dv/dt
I
I
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
J(pk)
T
stg
R
J
−65 to +175
−65 to +175
10,000
Max
500
175
2.0
45
30
60
60
1
V/ms
Unit
°C
°C
°C
V
A
A
A
A
MBR6045WT
MBR6045WTG
Device
1
60 AMPERES, 45 VOLTS
SCHOTTKY BARRIER
2
ORDERING INFORMATION
3
A
Y
WW
G
MARKING DIAGRAM
http://onsemi.com
RECTIFIER
1
3
MBR6045WT
(Pb−Free)
Package
TO−247
TO−247
AYWWG
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Publication Order Number:
CASE 340L
STYLE 2
TO−247
30 Units/Rail
30 Units/Rail
MBR6045WT/D
2, 4
Shipping

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MBR6045WT Summary of contents

Page 1

... SCHOTTKY BARRIER RECTIFIER 60 AMPERES, 45 VOLTS TO−247 2 3 CASE 340L STYLE 2 MARKING DIAGRAM MBR6045WT AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR6045WT TO−247 30 Units/Rail MBR6045WTG TO−247 30 Units/Rail (Pb−Free) Publication Order Number: MBR6045WT/D ...

Page 2

THERMAL CHARACTERISTICS (Per Diode) Thermal Resistance, Junction−to−Case ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note Amps 25° Amps 125° Amps, T ...

Page 3

... Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 STYLE 2: PIN 1. ANODE 2. CATHODE (S) 3. ANODE 2 4. CATHODES (S) ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR6045WT/D ...

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