BAT54SWT1 ON Semiconductor, BAT54SWT1 Datasheet - Page 2

• Manufacturer Part Number: BAT54SWT1
• Description: DIODE SCHOTTKY DUAL 30V SOT323
• Manufacturer: ON Semiconductor

Specifications of BAT54SWT1

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BAT54SWT1OSCT

ELECTRICAL CHARACTERISTICS
+10 V
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Time
Forward Voltage
Forward Voltage
50 W OUTPUT
GENERATOR
(I
(V
(V
(I
(I
(I
(I
(I
(I
R
F
F
F
F
F
F
R
R
PULSE
= 0.1 mAdc)
= 30 mAdc)
= 100 mAdc)
= I
= 1.0 mAdc)
= 10 mAdc)
= 10 mA)
= 1.0 V, f = 1.0 MHz)
= 25 V)
820 W
R
= 10 mAdc, I
0.1 mF
100 mH
2 k
R(REC)
Characteristic
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
= 1.0 mAdc, Figure 1)
I
F
DUT
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
» t
(T
A
rr
= 25°C unless otherwise noted) (EACH DIODE)
OSCILLOSCOPE
0.1 mF
50 W INPUT
SAMPLING
http://onsemi.com
R(peak)
2
V
R
is equal to 10 mA.
t
Symbol
r
V
INPUT SIGNAL
(BR)R
10%
90%
C
V
V
V
V
V
I
t
R
rr
T
F
F
F
F
F
t
p
T
Min
30
−
−
−
−
−
−
−
−
F
) of 10 mA.
I
I
R
F
0.22
0.41
0.52
0.29
0.35
Typ
7.6
0.5
−
−
(I
F
= I
at i
OUTPUT PULSE
R
= 10 mA; measured
R(REC)
Max
0.24
0.32
0.40
t
rr
2.0
0.5
0.8
5.0
10
−
i
R(REC)
= 1 mA)
= 1 mA
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
T
pF
ns
V