BAS40-06LT1 ON Semiconductor, BAS40-06LT1 Datasheet - Page 2

• Manufacturer Part Number: BAS40-06LT1
• Description: DIODE SCHOTTKY 40V CA SOT23
• Manufacturer: ON Semiconductor

Specifications of BAS40-06LT1

• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Current - Reverse Leakage @ Vr: 1µA @ 25V
• Current - Average Rectified (io) (per Diode): 120mA (DC)
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Other names: BAS40-06LT1OSCT

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
100
1.0
0.1
10
0
25°C
1 25°C
85°C
(I
(V
(V
(I
(I
(I
R
F
F
F
0.1
R
R
= 1.0 mAdc)
= 10 mAdc)
= 40 mAdc)
150°C
= 10 mA)
= 1.0 V, f = 1.0 MHz)
= 25 V)
Figure 1. Typical Forward Voltage
0.2
V
F
, FORWARD VOLTAGE (VOLTS)
- 40°C
0.3
0.4
3.5
3.0
2.5
2.0
1.5
1.0
0.5
- 55°C
0
Characteristic
0
(T
0.5
A
5.0
= 25°C unless otherwise noted)
0.6
Figure 3. Typical Capacitance
10
V
R
0.7
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
15
0.8
20
2
0.001
0.01
100
1.0
0.1
25
10
0
T
A
125°C
= 150°C
Figure 2. Reverse Current versus Reverse
85°C
25°C
30
5.0
35
V
R
, REVERSE VOLTAGE (VOLTS)
Symbol
V
40
(BR)R
C
V
V
V
I
R
T
F
F
F
10
Voltage
Min
40
15
−
−
−
−
−
Max
380
500
5.0
1.0
1.0
−
20
mVdc
mVdc
mAdc
Unit
Vdc
pF
V
25