MUR1615CT ON Semiconductor, MUR1615CT Datasheet - Page 2
![DIODE ULT FAST 150V 8A TO220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MUR1615CT
Manufacturer Part Number
MUR1615CT
Description
DIODE ULT FAST 150V 8A TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MUR1660CTG.pdf
(7 pages)
Specifications of MUR1615CT
Voltage - Forward (vf) (max) @ If
975mV @ 8A
Current - Reverse Leakage @ Vr
5µA @ 150V
Current - Average Rectified (io) (per Diode)
8A
Voltage - Dc Reverse (vr) (max)
150V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MUR1615CTOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUR1615CT
Manufacturer:
ON
Quantity:
5 000
Company:
Part Number:
MUR1615CTG
Manufacturer:
MOT
Quantity:
12 500
Part Number:
MUR1615CTG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Rectified Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature and Storage Temperature
Maximum Thermal Resistance, Junction−to−Case
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
Working Peak Reverse Voltage
DC Blocking Voltage
Total Device, (Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
(I
(I
F
F
F
F
= 8.0 A, T
= 8.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, I
R
, Square Wave, 20 kHz), T
R
C
C
= 1.0 A, I
= 150°C)
= 25°C)
C
C
R
REC
= 150°C)
= 25°C)
), T
Characteristic
Parameter
C
= 0.25 A)
Rating
= 150°C
(Per Diode Leg)
C
(Per Diode Leg)
= 150°C
Per Diode Leg
http://onsemi.com
Total Device
Per Leg
2
Symbol
Symbol
Symbol
T
V
V
I
R
I
J
F(AV)
I
FSM
RWM
V
RRM
, T
v
FM
i
t
qJC
R
rr
R
F
stg
10CT
100
0.895
0.975
15CT
1620
150
250
3.0
5.0
35
25
*65 to +175
MUR16
Value
20CT
200
100
8.0
16
16
40CT
1640
1.00
1.30
400
500
2.0
10
60
50
60CT
1660
1.20
1.50
600
°C/W
Unit
Unit
Unit
°C
mA
ns
V
A
A
A
V