HFA16TA60CS Vishay, HFA16TA60CS Datasheet - Page 2

DIODE HEXFRED 600V 8.0A D2PAK

HFA16TA60CS

Manufacturer Part Number
HFA16TA60CS
Description
DIODE HEXFRED 600V 8.0A D2PAK
Manufacturer
Vishay
Series
HEXFRED®r
Datasheet

Specifications of HFA16TA60CS

Voltage - Forward (vf) (max) @ If
1.7V @ 8A
Current - Reverse Leakage @ Vr
5µA @ 600V
Current - Average Rectified (io) (per Diode)
8A (DC)
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
55ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*HFA16TA60CS
VS-HFA16TA60CS
VS-HFA16TA60CS
VSHFA16TA60CS
VSHFA16TA60CS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HFA16TA60CS
Manufacturer:
IR
Quantity:
10 000
Part Number:
HFA16TA60CSTRRP
Manufacturer:
PH
Quantity:
2 604
HFA16TA60CS
Vishay High Power Products
www.vishay.com
2
ELECTRICAL SPECIFICATIONS PER LEG (T
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
Maximum reverse
leakage current
Junction capacitance
Series inductance
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T
PARAMETER
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
See fig. 11 & 12
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
b
dI
dI
SYMBOL
SYMBOL
SYMBOL
(rec)M
(rec)M
I
I
R
R
T
V
V
RRM1
RRM2
Q
Q
I
C
L
t
t
RM
t
lead
thJC
thJA
rr1
rr2
FM
BR
rr
S
rr1
rr2
T
For technical questions, contact: diodes-tech@vishay.com
/dt1
/dt2
I
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
I
T
T
T
T
T
T
T
T
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Case style D
R
F
F
F
Ultrafast Soft Recovery Diode, 2 x 8 A
F
J
R
R
J
J
J
J
J
J
J
J
= 8.0 A
= 16 A
= 8.0 A, T
= 100 µA
= 1.0 A, dI
= 125 °C, V
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= V
= 200 V
R
rated
J
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
F
2
= 125 °C
/dt = 200 A/µs, V
PAK
R
= 0.8 x V
J
= 25 °C unless otherwise specified)
HEXFRED
I
dI
V
R
F
R
F
= 8.0 A
rated
/dt = 200 A/µs
= 200 V
R
= 30 V
J
= 25 °C unless otherwise specified)
®
See fig. 1
See fig. 2
See fig. 3
MIN.
MIN.
(5.0)
MIN.
600
6.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
0.07
HFA16TA60CS
124
240
210
100
3.5
4.5
1.4
1.7
1.4
0.3
8.0
18
37
55
65
10
2
-
-
-
-
-
-
Document Number: 93073
Revision: 22-Oct-08
MAX.
MAX.
MAX.
1.75
(10)
138
360
300
500
1.7
2.1
1.7
5.0
5.0
8.0
3.5
25
55
90
80
12
-
-
-
-
-
-
-
kgf · cm
(lbf ⋅ in)
UNITS
UNITS
UNITS
A/µs
K/W
oz.
µA
pF
nH
nC
ns
°C
V
A
g

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