MBR40H100WTG ON Semiconductor, MBR40H100WTG Datasheet - Page 4

• Manufacturer Part Number: MBR40H100WTG
• Description: DIODE SCHOTTKY 100V 20A TO-247AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR40H100WTG

• Voltage - Forward (vf) (max) @ If: 800mV @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 20 A
• Max Surge Current: 200 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.9 V @ 40 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 40A
• Forward Voltage Vf Max: 850mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.001
0.01
0.000001
0.1
8.0
4.0
10
28
24
20
16
30
12
1
0
0
0.05
D = 0.5
0.01
0.2
0.1
SINGLE PULSE
4.0
T
I
Figure 7. Forward Power Dissipation
F(AV)
J
= 175°C
0.00001
, AVERAGE FORWARD CURRENT (A)
8.0
12
0.0001
16
Figure 9. Thermal Response Junction−to−Case
20
0.001
Square Wave
24
http://onsemi.com
t
1
28
dc
0.01
, TIME (sec)
30
4
10000
1000
100
10
0
0.1
20
V
1
R
Figure 8. Capacitance
, REVERSE VOLTAGE (V)
40
10
P
60
DUTY CYCLE, D = t
(pk)
100
t
1
t
80
2
T
J
= 25°C
1
/t
2
1000
100