MBR4045WTG ON Semiconductor, MBR4045WTG Datasheet - Page 2

• Manufacturer Part Number: MBR4045WTG
• Description: DIODE SCHOTTKY 45V 20A TO-247AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR4045WTG

• Voltage - Forward (vf) (max) @ If: 700mV @ 20A
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 40 A
• Max Surge Current: 400 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current,
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate of Change
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
(Rated V
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
@ I
@ I
@ I
@ I
@ Rated DC Voltage, T
@ Rated DC Voltage, T
F
F
F
F
= 20 Amps, T
= 20 Amps, T
= 40 Amps, T
= 40 Amps, T
R
, T
R
, Square Wave, 20 kHz, T
C
= 125°C)
Characteristic
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
J
J
= 25°C
= 100°C
Per Diode
Per Device
Characteristic
C
= 90°C) Per Diode
Rating
http://onsemi.com
Symbol
V
2
I
R
F
Conditions
Min. Pad
Min. Pad
Min
−
−
−
−
−
−
D
/dT
Symbol
Symbol
Typical
V
V
I
T
I
dv/dt
J
R
R
I
I
0.52
0.47
0.65
0.63
0.09
F(AV)
FRM
RRM
T
RWM
FSM
7.5
RRM
V
J(pk)
T
< 1/R
qJC
qJA
stg
R
J
qJA
.
−65 to +175
−65 to +175
10,000
Max
Max
50.1
Max
0.70
0.60
0.80
0.75
400
175
2.0
1.4
1.0
45
20
40
40
50
°C/W
°C/W
V/ms
Unit
Unit
Unit
mA
°C
°C
°C
V
A
A
A
A
V