MBR20200CTG ON Semiconductor, MBR20200CTG Datasheet - Page 2

• Manufacturer Part Number: MBR20200CTG
• Description: DIODE SCHOTTKY 200V 10A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR20200CTG

• Voltage - Forward (vf) (max) @ If: 900mV @ 10A
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 20 A
• Max Surge Current: 150 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Capacitance, Junction: 500 pF
• Current, Forward: 20 A
• Current, Reverse: 0.4 mA
• Current, Surge: 150 A
• Package Type: TO-220AB
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Voltage, Forward: 0.89 V
• Voltage, Reverse: 200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR20200CTGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
Peak Repetitive Forward Current per Leg
(Square Wave, 20 kHz, T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance,
Junction−to−Case
Maximum Thermal Resistance,
Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Capacitance (V
R
= −5.0 V, T
Characteristic
(Per Leg)
C
= 158°C)
C
= 25°C, Frequency = 1.0 MHz)
Characteristic
Characteristic
R
)
Rating
(Per Leg)
C
= 161°C)
(Rated dc Voltage, T
(Rated dc Voltage, T
(Per Leg)
(I
(I
(I
(I
F
F
F
F
= 10 A, T
= 20 A, T
= 10 A, T
= 20 A, T
http://onsemi.com
Per Package
J
J
J
J
J
J
= 125°C)
= 125°C)
= 125°C)
Minimum Pad
Minimum Pad
Per Leg
= 25°C)
= 25°C)
= 25°C)
Condition
2
Symbol
Symbol
Symbol
Symbol
V
V
I
dv/dt
R
I
I
R
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
V
C
T
I
qJC
qJA
stg
R
R
J
F
T
Min
−
−
−
−
−
−
−65 to +175
−65 to +175
Typical
10,000
0.0002
Value
Value
Value
60.0
0.80
0.66
0.89
0.76
200
150
500
1.0
2.0
0.4
10
20
20
Max
0.90
0.80
1.00
0.90
1.0
50
°C/W
°C/W
V/ms
Unit
Unit
Unit
Unit
mA
°C
°C
pF
V
A
A
A
A
V