MUR1640CTG ON Semiconductor, MUR1640CTG Datasheet - Page 2

• Manufacturer Part Number: MUR1640CTG
• Description: DIODE ULT FAST 400V 8A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR1640CTG

• Voltage - Forward (vf) (max) @ If: 1.30V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.3 V
• Recovery Time: 60 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUR1640CTGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Rectified Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature and Storage Temperature
Maximum Thermal Resistance, Junction−to−Case
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
Working Peak Reverse Voltage
DC Blocking Voltage
Total Device, (Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
(I
(I
F
F
F
F
= 8.0 A, T
= 8.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, I
R
, Square Wave, 20 kHz), T
R
C
C
= 1.0 A, I
= 150°C)
= 25°C)
C
C
R
REC
= 150°C)
= 25°C)
), T
Characteristic
Parameter
C
= 0.25 A)
Rating
= 150°C
(Per Diode Leg)
C
(Per Diode Leg)
= 150°C
Per Diode Leg
http://onsemi.com
Total Device
Per Leg
2
Symbol
Symbol
Symbol
T
V
V
I
R
I
J
F(AV)
I
FSM
RWM
V
RRM
, T
v
FM
i
t
qJC
R
rr
R
F
stg
10CT
100
0.895
0.975
15CT
1620
150
250
3.0
5.0
35
25
*65 to +175
MUR16
Value
20CT
200
100
8.0
16
16
40CT
1640
1.00
1.30
400
500
2.0
10
60
50
60CT
1660
1.20
1.50
600
°C/W
Unit
Unit
Unit
°C
mA
ns
V
A
A
A
V