MBRD660CTG ON Semiconductor, MBRD660CTG Datasheet - Page 2

• Manufacturer Part Number: MBRD660CTG
• Description: DIODE SCHOTTKY 60V 3A DPAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRD660CTG

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: MBRD660CTG; MBRD660CTGOS

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS PER DIODE
ELECTRICAL CHARACTERISTICS PER DIODE
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current, T
Nonrepetitive Peak Surge Current − (Surge applied at rated load
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
Working Peak Reverse Voltage
DC Blocking Voltage
T
(Rated V
conditions halfwave, single phase, 60 Hz)
i
i
i
i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
C
= 3 Amps, T
= 3 Amps, T
= 6 Amps, T
= 6 Amps, T
= 130°C (Rated V
R
, Square Wave, 20 kHz) Per Diode
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
C
C
R
)
= 25°C)
= 125°C)
Rating
Rating
R
)
C
= 130°C
Per Diode
Per Device
http://onsemi.com
2
Symbol
Symbol
V
V
I
I
dv/dt
R
R
I
I
F(AV)
FRM
RRM
T
RWM
FSM
RRM
V
V
T
i
qJC
qJA
stg
R
R
J
F
620CT
20
630CT
30
D
/dT
−65 to +175
−65 to +175
J
10,000
MBRD
640CT
Value
< 1/R
0.65
0.85
0.7
0.9
0.1
40
75
80
15
3
6
6
1
6
qJA
.
650CT
50
660CT
60
°C/W
°C/W
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
A
V