MBRB2545CTT4G ON Semiconductor, MBRB2545CTT4G Datasheet - Page 4

• Manufacturer Part Number: MBRB2545CTT4G
• Description: DIODE SCHOTTKY 45V 15A D2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRB2545CTT4G

• Voltage - Forward (vf) (max) @ If: 620mV @ 15A
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: MBRB2545CTT4GOSTR

SEATING
PLANE
−T−
VARIABLE
CONFIGURATION
ZONE
M
1
VIEW W−W
G
−B−
4
2
F
1
3
D
0.13 (0.005)
3 PL
S
L
10.66
0.42
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
R
T
B
VIEW W−W
M
K
F
2
8.38
0.33
PACKAGE DIMENSIONS
C
SOLDERING FOOTPRINT*
H
N
http://onsemi.com
MBRB2545CT
A
CASE 418B−04
L
E
J
17.02
D
V
0.67
ISSUE J
W
W
2
PAK 3
4
M
U
VIEW W−W
3.05
0.12
F
3
SCALE 3:1
1.016
0.04
P
L
inches
5.08
0.20
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
STYLE 3:
DIM
PIN 1. ANODE
A
B
C
D
G
H
K
M
N
R
E
F
J
L
P
S
V
2. CATHODE
3. ANODE
4. CATHODE
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.025
0.072
0.320
0.625
0.055
0.110
0.110
MAX
14.60
MILLIMETERS
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
1.14
MIN
7.11
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40