MBRB30H60CT-1G ON Semiconductor, MBRB30H60CT-1G Datasheet

DIODE SCHOTTKY 60V 15A H I2PAK

MBRB30H60CT-1G

Manufacturer Part Number
MBRB30H60CT-1G
Description
DIODE SCHOTTKY 60V 15A H I2PAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBRB30H60CT-1G

Voltage - Forward (vf) (max) @ If
620mV @ 15A
Current - Reverse Leakage @ Vr
300µA @ 60V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
15 A
Max Surge Current
260 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.62 V
Maximum Reverse Leakage Current
300 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
60V
Forward Current If(av)
15A
Forward Voltage Vf Max
780mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRB30H60CT-1G
Manufacturer:
ON/安森美
Quantity:
20 000
MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G
SWITCHMODE™
Power Rectifier
60 V, 30 A
Features and Benefits
Applications
Mechanical Characteristics:
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 8
Please See the Table on the Following Page
Weight (Approximately):
Weight (Approximately):
Leads are Readily Solderable
260°C Max. for 10 Seconds
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
These are Pb−Free Devices
Power Supply − Output Rectification
Power Management
Instrumentation
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.5 Grams (I
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
1.7 Grams (D
1.9 Grams (TO−220 and TO−220FP)
2
2
PAK)
PAK)
1
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING AND MARKING INFORMATION
I
2
PAK (TO−262)
CASE 418D
CASE 221D
30 AMPERES, 60 VOLTS
PLASTIC
STYLE 3
STYLE 3
TO−220
1 2
SCHOTTKY BARRIER
3
4
http://onsemi.com
RECTIFIERS
1
3
Publication Order Number:
MBRB30H60CT−1/D
1
CASE 221A
CASE 418B
PLASTIC
2
STYLE 6
TO−220
D
2, 4
3
2
PAK
4

Related parts for MBRB30H60CT-1G

MBRB30H60CT-1G Summary of contents

Page 1

... MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G SWITCHMODE™ Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • Total (15 A Per Diode Leg) • Guard−Ring for Stress Protection • ...

Page 2

... Voltage Rate of Change (Rated Controlled Avalanche Energy (see test conditions in Figures 11 and 12) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBRB30H60CT−1G and MBR30H60CTG) − Junction−to−Case (MBRF30H60CTG) (MBRB30H60CTTRG) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 25°C) ...

Page 3

... SQUARE WAVE 100 110 120 130 140 150 T , CASE TEMPERATURE (°C) C Figure 5. Current Derating for MBRB30H60CT−1G, MBR30H60CTG, and MBRB30H60CTT4G 100 10 1 0.1 0.8 1.0 1 INSTANTANEOUS FORWARD VOLTAGE (V) F Figure 2. Maximum Forward Voltage 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E− ...

Page 4

... Figure 8. Current Derating for MBRF30H60CTG 0.5 1 0.2 0.1 0.05 0.1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 Figure 9. Thermal Response Junction−to−Case for MBRB30H60CT−1G, MBR30H60CTG and 0.5 1 0.2 0.1 0.05 0.1 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 Figure 10. Thermal Response Junction− ...

Page 5

COIL MERCURY SWITCH DUT S 1 Figure 11. Test Circuit The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury ...

Page 6

... AYWW B30H60G AKA ORDERING INFORMATION Device MBRB30H60CT−1G MBR30H60CTG MBRF30H60CTG MBRB30H60CTT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAMS TO−220 TO−220 CASE 221D CASE 221A ...

Page 7

−T− SEATING K PLANE 0.13 (0.005 PACKAGE ...

Page 8

... PLANE 0.13 (0.005 STYLE 1: PIN 1. BASE VARIABLE CONFIGURATION ZONE VIEW W−W 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE STYLE 2: STYLE 3: PIN 1 ...

Page 9

... BSC Q 0.122 0.138 3.10 3.50 R 0.099 0.117 2.51 2.96 S 0.092 0.113 2.34 2.87 U 0.239 0.271 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRB30H60CT−1/D ...

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