BAW56M3T5G ON Semiconductor, BAW56M3T5G Datasheet
BAW56M3T5G
Manufacturer Part Number
BAW56M3T5G
Description
IC DIODE DUAL SW CA 70V SOT-723
Manufacturer
ON Semiconductor
Datasheet
1.BAW56M3T5G.pdf
(4 pages)
Specifications of BAW56M3T5G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SOT-723
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Quantity
Price
Company:
Part Number:
BAW56M3T5G
Manufacturer:
ON Semiconductor
Quantity:
6 350
Company:
Part Number:
BAW56M3T5G
Manufacturer:
ON
Quantity:
30 000
BAW56M3T5G
Dual Switching Diode
Common Anode
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
The BAW56M3T5G device is a spin−off of our popular SOT−23
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
FR−5 Board (Note 1)
T
Derate above 25°C
Junction−to−Ambient
Alumina Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
Rating
(EACH DIODE)
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to
Value
+150
Max
200
500
265
470
640
195
2.1
5.1
75
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
mW
mW
°C
†For information on tape and reel specifications,
BAW56M3T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
ANODE
DUAL COMMON ANODE
1
ORDERING INFORMATION
SWITCHING DIODE
AN = Specific Device Code
M
3
2
http://onsemi.com
= Date Code
CASE 631AA
(Pb−Free)
SOT−723
STYLE 4
SOT−723
Package
70 V
Publication Order Number:
8000/Tape & Reel
CATHODE
1
2
CATHODE
MARKING
DIAGRAM
1
Shipping
BAW56M3/D
AN M
†
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BAW56M3T5G Summary of contents
Page 1
... BAW56M3T5G Dual Switching Diode Common Anode The BAW56M3T5G device is a spin−off of our popular SOT−23 three−leaded device designed for switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space premium ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Voltage Leakage Current Diode Capacitance Forward Voltage Reverse Recovery Time ( mA 1.0 mA) (Figure R(REC) 820 W + 100 ...
Page 3
T = 85° 1 25°C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 1.75 1.5 1.25 1.0 0.75 0 Curves Applicable to Each Cathode 10 1.0 T ...
Page 4
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...