BAS 28W H6327 Infineon Technologies, BAS 28W H6327 Datasheet - Page 2

• Manufacturer Part Number: BAS 28W H6327
• Description: DIODE SW 80V 200MA HS SOT143
• Manufacturer: Infineon Technologies

Specifications of BAS 28W H6327

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS28WH6327XT

Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
V
V
Thermal Resistance
Parameter
Junction - soldering point
BAS28
BAS28W
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
1
Breakdown voltage
I
Forward voltage
I
I
I
I
I
F
(BR)
F
F
F
F
F
For calculation of R
R
R
R
R
L
= 10 mA, I
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 75 V
= 25 V, T
= 75 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA
A
A
R
= 150 °C
= 150 °C
= 10 mA, measured at I
thJA
F
please refer to Application Note Thermal Resistance
D.U.T.
1)
Oscillograph
A
= 25°C, unless otherwise specified
EHN00019
R
= 1mA ,
Oscillograph: R = 50 , t
Pulse generator: t
2
Symbol
V
I
Symbol
C
t
V
R
R
rr
(BR)
F
T
thJS
C
p
min.
= 100ns, D = 0.05,
85
1pF
t
-
-
-
-
-
-
-
-
r
-
-
= 0.6ns, R
r
= 0.35ns,
Values
Value
typ.
360
190
-
-
-
-
-
-
-
-
-
-
-
i
= 50
max.
1000
1200
1250
715
855
0.1
30
50
-
2
4
2007-04-19
BAS28...
Unit
µA
Unit
K/W
V
mV
pF
ns