BAS 40-06 E6433 Infineon Technologies, BAS 40-06 E6433 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BAS 40-06 E6433
Manufacturer Part Number
BAS 40-06 E6433
Description
DIODE SCHOTTKY 40V 120MA SOT-23
Manufacturer
Infineon Technologies
Datasheet
1.BAS_40-04_E6327.pdf
(15 pages)
Specifications of BAS 40-06 E6433
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1V @ 40mA
Current - Reverse Leakage @ Vr
1µA @ 30V
Current - Average Rectified (io) (per Diode)
120mA (DC)
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.12 A
Max Surge Current
0.2 A
Configuration
Dual Common Anode
Recovery Time
0.1 ns
Forward Voltage Drop
1 V at 0.04 A
Maximum Reverse Leakage Current
1 uA at 30 V
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BAS4006E6433XT
SP000010244
SP000010244
1
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
Forward voltage
I
I
I
Forward voltage matching
I
AC Characteristics
Diode capacitance
V
Differential forward resistance
I
Charge carrier life time
I
(BR)
F
F
F
F
F
F
R
R
V
= 1 mA
= 10 mA
= 40 mA
= 10 mA
= 10 mA, f = 10 kHz
= 25 mA
F
= 30 V
= 0 , f = 1 MHz
is the difference between lowest and highest V
= 10 µA
1)
A
= 25°C, unless otherwise specified
F
in a multiple diode component.
3
Symbol
V
I
V
C
R
R
(BR)
F
T
F
rr
V
F
min.
250
350
600
40
-
-
-
-
-
BAS40.../BAS140W
Values
310
450
720
typ.
10
3
-
-
-
-
max.
1000
380
500
100
2007-04-19
20
1
5
-
-
Unit
V
µA
mV
pF
ps