MMBD2836LT1G ON Semiconductor, MMBD2836LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBD2836LT1G
• Description: DIODE SWITCH DUAL 75V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBD2836LT1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 75V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.1 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBD2836LT1GOSTR

3. For each individual diode while the second diode is unbiased.
+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (Note 3)
Diode Capacitance (V
Forward Voltage (I
Forward Voltage
Forward Voltage
Reverse Recovery Time (I
50 W OUTPUT
(V
(V
GENERATOR
R
R
PULSE
= 30 Vdc)
= 50 Vdc)
820 W
0.1 mF
(I
(I
F
F
F
2.0 k
100 mH
= 10 mAdc)
= 50 mAdc)
= 100 mAdc)
R
= 0 V, f = 1.0 MHz)
F
= I
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
R
R
F
= 100 mAdc)
= 10 mAdc, I
Characteristic
DUT
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
(T
» t
A
rr
= 25°C unless otherwise noted) (EACH DIODE)
R(REC)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
= 1.0 mAdc) (Figure 1)
http://onsemi.com
MMBD2835LT1G
MMBD2836LT1G
MMBD2835LT1G
MMBD2836LT1G
R(peak)
V
2
R
t
is equal to 10 mA.
r
INPUT SIGNAL
10%
90%
t
p
Symbol
V
t
C
V
(BR)
I
t
R
rr
T
F
F
) of 10 mA.
I
I
R
F
Min
35
75
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
Max
100
100
4.0
1.0
1.0
1.2
4.0
−
−
i
R(REC)
= 1.0 mA)
= 1.0 mA
nAdc
t
Unit
Vdc
Vdc
pF
ns