BAW56LT1G ON Semiconductor, BAW56LT1G Datasheet
BAW56LT1G
Specifications of BAW56LT1G
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BAW56LT1G Summary of contents
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... D 1.8 mW/°C R 556 °C/W qJA P 300 mW D 2.4 mW/°C R 417 °C/W qJA −55 to °C J stg +150 BAW56LT1G BAW56LT3G †For information on tape and reel specifications, 1 http://onsemi.com CATHODE 1 ANODE 3 2 CATHODE SOT−23 (TO−236) CASE 318 STYLE 12 MARKING DIAGRAM Device Code M = Date Code Pb− ...
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ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Voltage Leakage Current Diode Capacitance Forward Voltage Reverse Recovery Time ( mA 1.0 mA) (Figure R(REC) 820 W + 100 ...
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T = 85° 1 25°C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 1.75 1.5 1.25 1.0 0.75 0 Curves Applicable to Each Cathode 10 1.0 T ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...