DSSK80-0045B IXYS, DSSK80-0045B Datasheet - Page 2

• Manufacturer Part Number: DSSK80-0045B
• Description: DIODE SCHOTTKY 45V 2X40A TO247AD
• Manufacturer: IXYS

Specifications of DSSK80-0045B

• Voltage - Forward (vf) (max) @ If: 510mV @ 40A
• Current - Reverse Leakage @ Vr: 30mA @ 45V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247AD
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 80 A
• Max Surge Current: 750 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.51 V @ 40 A
• Maximum Reverse Leakage Current: 20000 uA
• Maximum Power Dissipation: 155 W
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: Through Hole
• Vrrm, (v): 45
• Ifavm, D = 0.5, Total, (a): 80
• Ifavm, D = 0.5, Per Diode, (a): 40
• @ Tc, (°c): 125
• Vf, Max, Tvj =125°c, (v): 0.45
• @ If, (a): 40
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.80
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSSK800045B

Fig. 1 Maximum forward voltage
Fig. 4 Average forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
2 - 2
I
Z
F
I
thJC
F(AV)
K/W
100
0.05
0.1
A
10
80
70
60
50
40
30
20
10
A
0.001
1
1
0
0.0
0
D=0.5
drop characteristics
versus case temperature T
0.08
0.33
0.25
0.17
40
0.2
80
0.4
T
150 C
125 C
0.01
d=0.5
25 C
VJ
T
=
C
V
120
F
Single Pulse
0.6
DC
F(AV)
C
C
V
160
0.1
I
P
10000
R
Fig. 2 Typ. value of reverse current I
Fig. 5 Forward power loss
(AV)
1000
100
mA
0.1
10
45
40
35
30
25
20
15
10
W
5
0
1
0
0
T
125 C
100 C
50 C
25 C
75 C
versus reverse voltage V
characteristics
VJ
=150 C
10
10
20
20
1
30
s
40
30
I
F(AV)
t
50
V
DSSK 80-0045B
R
40
d =
DC
0.5
0.33
0.25
0.17
0.08
60
R
V
50
10
A
R
I
10000
10000
FSM
C
Fig. 3 Typ. junction capacitance C
1000
1000
Note: All curves are per diode
T
100
100
pF
A
10
0
versus reverse voltage V
© 2002 IXYS All rights reserved
10
DSSK 80-0045B
100
20
1000
30
V
T
t
R
P
VJ
= 25 C
s
40
R
10000
V
T