DHG20C600QB IXYS, DHG20C600QB Datasheet
DHG20C600QB
Manufacturer Part Number
DHG20C600QB
Description
DIODE FRD CC 600V 2X10A TO-3P
Manufacturer
IXYS
Datasheet
1.DHG20C600QB.pdf
(2 pages)
Specifications of DHG20C600QB
Voltage - Forward (vf) (max) @ If
2.35V @ 10A
Current - Reverse Leakage @ Vr
150µA @ 600V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-3P
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
20
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
100
Ifsm, 10 Ms, Tvj=45°c, (a)
100
Vf, Max, Tvj =125°c, (v)
2.20
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =25°c, (a)
4.0
@ -di/dt, (a/µs)
200
Tvjm, (°c)
150
Rthjc, Max, (k/w)
1.80
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DHG20C600QB
Manufacturer:
IXYS
Quantity:
12 500
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DHG 20 C 600QB
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
V
V
r
T
P
I
I
t
C
E
I
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
Symbol
V
I
I
R
Features / Advantages:
FSM
RM
AR
R
FAV
F
rr
VJ
RRM
F0
tot
J
AS
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
thJC
virtual junction temperature
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
(Marking on product)
for power loss calculation only
Conditions
V
V
I
I
I
I
rectangular, d = 0.5
t
I
-di
V
V
I
V
F
F
F
F
p
F
AS
R
R
A
R
R
F
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
= 10
=
=
=
=
=
=
=
=
=
=
=
/dt
1
switching devices
supplies (SMPS)
400
1.5·V
300
10
600
600
10
20
10
20
= 200 A/µs
ms (50 Hz), sine
A;
A;
V
V;
A
A
A
A
R
V
V
typ.;
2
f = 1 MHz
L =
* Data according to IEC 60747and per diode unless otherwise specified
f = 10 kHz
100
µH
3
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 100 °C
= 150 °C
=
= 45 °C
= 25
= 125
= 25
= 125
=
=
125
125
25
25
25
25
25
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
DHG 20 C 600QB
V
I
t
Package:
TO-3P
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
FAV
- compatible with TO-247
rr
min.
RRM
-55
R a t i n g s
=
=
=
typ.
2x
35
4
600
10
35
max.
2.35
2.20
1.20
1.80
600
150
100
advanced
tbd
tbd
1.5
15
10
93
70
V
A
ns
Unit
K/W
m
mA
mJ
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A
A
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DHG20C600QB Summary of contents
Page 1
... C junction capacitance J E non-repetitive avalanche energy AS I repetitive avalanche current AR IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...
Page 2
... Irms is typically limited by: 1. pin-to-chip resistance current capability of the chip. In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Conditions per pin* ...