DSA50C100HB IXYS, DSA50C100HB Datasheet - Page 4

• Manufacturer Part Number: DSA50C100HB
• Description: DIODE SCHOTTKY 100V 2X25A TO247
• Manufacturer: IXYS

Specifications of DSA50C100HB

• Voltage - Forward (vf) (max) @ If: 900mV @ 25A
• Current - Reverse Leakage @ Vr: 500nA @ 100V
• Current - Average Rectified (io) (per Diode): 25A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Vrrm, (v): 100
• Ifavm, D = 0.5, Total, (a): 50
• Ifavm, D = 0.5, Per Diode, (a): 25
• @ Tc, (°c): 155
• Vf, Max, Tvj =125°c, (v): 0.72
• @ If, (a): 25
• Tvjm, (°c): 175
• Rthjc, Max, (k/w): 0.95
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
[A]
[K/W]
F(AV)
Z
I
[A]
F
thJC
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0.0001
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
Fig. 6 Transient thermal impedance junction to case
Fig. 1 Maximum forward voltage
Fig. 4 Average forward current
T
150°C
125°C
25°C
VJ
=
50
drop characteristics
I
F(AV)
d = 0.5
T
0.001
V
vs. case temperature T
C
100
F
[°C]
[V]
DC
150
0.01
200
Single Pulse
t [s]
P
[mA]
C
[W]
I
(AV)
0.0001
R
0.001
0.01
0.1
70
60
50
40
30
20
10
10
0
1
0.1
0
0
Fig. 5 Forward power loss
Fig. 2 Typ. reverse current
125°C
100°C
50°C
T
150°C
75°C
25°C
VJ
=175°C
10
20
Data according to IEC 60747and per diode unless otherwise specified
characteristics
20
I
R
vs. reverse voltage V
I
40
F(AV)
R
30
V
0.026
0.172
0.227
0.435
0.09
thi
R
1
[K/W]
[V]
40
[A]
60
50
0.0005
0.011
0.072
0.34
1.5
t
80
i
d =
DC
0.5
0.33
0.25
0.17
0.08
[s]
60
10
100
70
R
[pF]
C
T
1000
Note: All curves are per diode
800
600
400
200
0
DSA 50 C 100 HB
0
Fig. 3 Typ. junction capacitance
20
C
T
vs. reverse voltage V
40
V
R
T
VJ
[V]
= 25°C
60
80
20101129a
100
R