DSEC16-12A IXYS, DSEC16-12A Datasheet
DSEC16-12A
Manufacturer Part Number
DSEC16-12A
Description
DIODE UFAST 1200V 10A TO-220AB
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEC16-12A.pdf
(2 pages)
Specifications of DSEC16-12A
Voltage - Forward (vf) (max) @ If
2.94V @ 10A
Current - Reverse Leakage @ Vr
60µA @ 1200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
40ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220AB
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
20
Ifavm, D = 0.5, Per Diode, (a)
10
@ Tc, (°c)
115
Ifrms, (a)
14
Ifsm, 10 Ms, Tvj=45°c, (a)
40
Vf, Max, Tvj =150°c, (v)
1.96
@ If, (a)
10
Trr, Typ, Tvj =25°c, (ns)
40
Irm , Typ, Tvj =100°c, (a)
4.0
@ -di/dt, (a/µs)
100
Tvjm, (°c)
175
Rthjc, Max, (k/w)
2.50
Package Style
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEC16-12A
Manufacturer:
IXYS
Quantity:
12 500
HiPerFRED
with common cathode and soft recovery
1200
Symbol
I
I
I
I
E
I
T
T
T
P
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 1999 IXYS All rights reserved
FRMS
FAVM
FRM
FSM
AR
R
RM
rr
V
VJ
VJM
stg
tot
F
AS
thJC
thCH
d
V
RSM
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 s, Duty Cycle < 2.0 %
RRM
V
Test Conditions
T
t
T
T
I
V
T
mounting torque
typical
Test Conditions
T
T
I
I
V
V
T
P
AS
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
< 10 s; rep. rating, pulse width limited by T
= 10 A;
= 1 A; -di/dt = 50 A/ s;
= 115°C; rectangular, d = 0.5
= 8 A; L = 180 µH
= 1.25·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
TM
Type
DSEC 16-12A
R
p
VJ
T
T
typ.; f = 10 kHz; repetitive
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 12 A; -di
Epitaxial Diode
= V
= V
= 150°C
= 25°C
RRM
RRM
F
/dt = 100 A/ s
typ.
VJM
0.45...0.55
0.5
40
Characteristic Values
-55...+175
-55...+150
Maximum Ratings
A
4...5
175
tbd
6.9
0.8
10
max.
14
40
60
0.25
1.96
2.94
2
2.5
8.5
60
C
lb.in.
K/W
K/W
Nm
mA
mJ
°C
°C
°C
ns
W
A
A
A
A
A
V
V
A
g
A
A
I
V
t
A = Anode, C = Cathode, TAB = Cathode
Features
Applications
Advantages
Dimensions see IXYS Catalog 2000 (CD)
TO-220 AB
FAV
rr
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Epoxy meets UL 94V-0
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
A
C
A
RM
RM
= 2x 10 A
= 1200 V
= 40 ns
-values
reduces:
DSEC 16-12A
C (TAB)
1 - 2
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DSEC16-12A Summary of contents
Page 1
... Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved A C Maximum Ratings ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus K thJC 0.1 0.01 0.001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case © 1999 IXYS All rights reserved 2000 T = 100° 600V R nC 1500 20A 10A 1000 500 0 100 A/ s 1000 -di ...