DSP8-08A IXYS, DSP8-08A Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
DSP8-08A
Manufacturer Part Number
DSP8-08A
Description
DIODE PHASE 800V 11A TO-220AC
Manufacturer
IXYS
Datasheet
1.DSP8-08S-TUBE.pdf
(3 pages)
Specifications of DSP8-08A
Voltage - Forward (vf) (max) @ If
1.15V @ 7A
Current - Reverse Leakage @ Vr
5µA @ 800V
Current - Average Rectified (io) (per Diode)
11A
Voltage - Dc Reverse (vr) (max)
800V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Through Hole
Package / Case
TO-220AC
Product
Standard Recovery Rectifier
Configuration
Dual
Reverse Voltage
800 V
Forward Voltage Drop
1.15 V at 7 A
Forward Continuous Current
11 A
Max Surge Current
100 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 180 C
Minimum Operating Temperature
- 40 C
Vrrm, (v)
800
Ifavm, Total, (a)
22
Ifavm, Per Diode, (a)
11
@ Tc, (°c)
100
Prsm, (kw)
-
Ifrms, (a)
17
Ifsm, 10 Ms, Tvj = 45°c, (a)
100
Vt0, (v)
0.80
Rt, (mohms)
40
Tvjm, (°c)
180
Rthjc, Max, (k/w)
3.50
Rthch, (k/w)
0.50
Package Style
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSP8-08A
Manufacturer:
IXYS
Quantity:
12 500
Company:
Part Number:
DSP8-08AC
Manufacturer:
IXYS
Quantity:
12 500
Company:
Part Number:
DSP8-08AS
Manufacturer:
IXYS
Quantity:
12 500
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
I
P
F
tot
K/W
25
20
15
10
20
15
10
W
A
0.0001
5
0
5
0
4
3
2
1
0
0.0
0
Fig. 1 Forward current versus voltage
Fig. 6 Transient thermal impedance junction to case
0.5
drop per diode
T
T
3
VJ
VJ
1.0
= 25°C
= 180°C
0.001
1.5
V
F
6
I
d(AV)M
2.0
V
0.01
9
2.5
A
I
FSM
150
100
0
50
A
0.001
0
Fig. 2 Surge overload current
50 Hz, 80% V
0.1
30
T
VJ
60
0.01
= 150°C
RRM
90
T
amb
1
T
120
VJ
0.1
= 45°C
t
t
RthJA:
12 K/W
20 K/W
50 K/W
3 K/W
5 K/W
8 K/W
s
150
s
C
DSP 8
180
1
10
I
d(AV)M
Constants for Z
I
2
1
2
3
4
t
10
A
10
i
15
12
A
2
Fig. 5 Max. forward current versus
9
6
3
0
s
2
1
1
0
Fig. 3 I
V
R
= 0 V
case temperature
40
R
0.252
1.045
1.932
0.271
thi
2
t versus time per diode
(K/W)
2
thJC
T
T
80
VJ
VJ
calculation:
= 150°C
= 45°C
3
120
DSP 8
4 5 6 7 8 9
t
0.002
0.032
0.227
1.2
T
i
C
(s)
160
t
ms
3 - 3
C
10