C3D20060D Cree Inc, C3D20060D Datasheet - Page 2

• Manufacturer Part Number: C3D20060D
• Description: DIODE SCHOT 600V 20A ZREC TO247
• Manufacturer: Cree Inc
• Series: Z-Rec™r

Specifications of C3D20060D

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.8V @ 10A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 0ns
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 20A
• Forward Voltage Vf Max: 1.8V
• Forward Surge Current Ifsm Max: 180A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance (Per Leg)
Electrical Characteristics (Per Leg)
Thermal Characteristics
2
Symbol
Symbol
**
Per Leg,
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
20
18
16
14
12
10
8
6
4
2
0
V
I
C
θJC
R
F
C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
C3D20060D Rev. A
T
T
T
T
J
J
J
J
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
Figure 1. Forward Characteristics
= 25°C
= 75°C
= 125°C
= 175°C
*
Both Legs
V
F
Forward Voltage (V)
Parameter
Typ.
480
1.5
2.0
10
20
25
50
42
Max.
200
1.8
2.4
50
Typ.
0.55
1.1
**
*
Unit
nC
μA
pF
V
°C/W
Unit
100
90
80
70
60
50
40
30
20
10
0
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
0 100 200 300 400 500 600 700 800 900
F
F
J
R
R
R
R
R
R
= 10 A T
= 10 A T
= 25°C
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 600 V T
= 600 V T
Figure 2. Reverse Characteristics
J
= 25°C, f = 1 MHz
V
J
J
=25°C
=175°C
Test Conditions
R
F
J
J
J
J
= 10 A
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Reverse Voltage (V)
=25°C
=175°C
T
T
T
T
J
J
J
J
= 25°C
= 75°C
= 125°C
= 175°C
Note