RF2001T2D Rohm Semiconductor, RF2001T2D Datasheet
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Manufacturer Part Number
RF2001T2D
Description
DIODE FAST REC 200V 10A TO220FN
Manufacturer
Rohm Semiconductor
Specifications of RF2001T2D
Voltage - Forward (vf) (max) @ If
930mV @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
30ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220FN-3 (Straight Leads)
Product
Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
0.93 V @ 10 A
Recovery Time
30 ns
Forward Continuous Current
20 A
Max Surge Current
80 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
General rectification
1) Cathode common type.
2) Ultra Low V
3) Very fast recovery
4) Low switching loss
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
Storage temoerature
(*1)Business frequencies, Rating of R-load, Tc=113C. 1/2 Io per diode
Forward voltage
Reverse current
Reverse recovery time
Fast recovery diode
Applications
Features
Construction
Absoslute maximum ratings (Ta=25C)
Electrical characteristic (Ta=25C)
(TO-220)
RF2001T2D
F
Parameter
Parameter
1.2
1.3
0.8
ROHM : T O220FN
Dimensions (Unit : mm)
①
(1) (2) (3)
10.0±0.3
0.1
Manufacture Date
①
Symbol
Symbol
Tstg
V
I
V
FSM
V
trr
Io
Tj
I
RM
R
R
F
Min.
1/3
-
-
-
0.7±0.1
-55 to +150
0.05
4.5±0.3
0.1
Limits
200
200
100
150
Typ.
0.87
0.01
20
20
2.6±0.5
2.8±0.2
0.1
Max.
0.93
10
30
Structure
Unit
Unit
C
C
μA
ns
V
V
A
A
V
(1) (2) (3)
I
V
I
F
F
=10A
R
=0.5A,I
=200V
2010.02 - Rev.D
Conditions
R
=1A,Irr=0.25*I
R
Related parts for RF2001T2D
RF2001T2D Summary of contents
... Fast recovery diode RF2001T2D Applications General rectification Features 1) Cathode common type. (TO-220) 2) Ultra Low Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absoslute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) ...
... RF2001T2D Electrical characteristics curves 10 Ta=150C 1 Ta=125C Ta=25C Ta=75C 0.1 Ta=-25C 0.01 0.001 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE:V (mV CHARACTERISTICS F F 890 Ta=25C I =10A F n=30pcs 880 870 860 850 AVE:867.0mV ...
... RF2001T2D D=t/T V =100V D=1 Tj=150 Sin(=180 100 125 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. D=1/2 Sin(=180 D=t =100V R T Tj=150C 0 150 100 125 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
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