RB731XNTR Rohm Semiconductor, RB731XNTR Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Arrays RB731XNTR
Manufacturer Part Number
RB731XNTR
Description
DIODE SCHOTTKY 40V 0.03A UMD6
Manufacturer
Rohm Semiconductor
Specifications of RB731XNTR
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Current - Reverse Leakage @ Vr
1µA @ 10V
Current - Average Rectified (io) (per Diode)
10mA
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Diodes
Schottky barrier diode
RB731XN
General rectification
1) Small power mold type.
2) Low V
3) High reliability
∗ Rating for each diode Io/3
Reverse voltage (repetitive peak)
Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature
Reverse voltage (DC)
Applications
Features
Absolute maximum ratings (Ta=25°C)
Electrical characteristic (Ta=25°C)
Forward voltage
Reverse current
Capacitance between terminal
(UMD6)
F
Parameter
Parameter
∗
Symbol
Taping dimensions (Unit : mm)
V
Ct
I
R
F
∗
External dimensions (Unit : mm)
0.25±
(6)
(1)
0.65
0.1
0.05
Symbol
2.0±0.2
1.3±0.1
Min.
Tstg
V
I
2.2±0.1
4.0±0.1
V
FSM
−
−
−
Each lead has same dimension
I
Tj
各リードとも
RM
O
R
(5)
同寸法
(2)
0.65
2.0±0.05
Typ.
(3)
(4)
−
−
2
dot (year week factory)
−40 to +125
JEITA : SC-88
JEDEC : SOT-363
ROHM : UMD6
Limits
200
125
40
40
30
4.0±0.1
Max.
0.15±0.05
0.37
0.9±0.1
1
−
0.7
φ1.5±0.1
0
0~0.1
Unit
Unit
mA
mA
µA
pF
°C
°C
V
V
V
φ1.1±0.1
V
V
I
F
R
R
=1mA
=10V
=1V, f=1MHz
Conditions
Land size figure
Structure
UMD6
0.65
Rev.B
0.35
RB731XN
0.65
0.3±0.1
1.15±0.1
1/3
Related parts for RB731XNTR
RB731XNTR Summary of contents
Diodes Schottky barrier diode RB731XN Applications General rectification Features 1) Small power mold type. (UMD6) 2) Low High reliability Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) ∗ Average rectified forward current Forward ...
Diodes Electrical characteristic curves 100 Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 0.01 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 300 Ta=25℃ IF=1mA 290 n=30pcs 280 270 260 AVE:267.4mV 250 VF DIPERSION ...
Diodes 0.1 Io Per chip 0A 0. D=t/T VR=15V 0.06 DC Tj=125℃ T D=1/2 0.04 0.02 Sin(θ=180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 0.1 Per chip ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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