UMN11NTN Rohm Semiconductor, UMN11NTN Datasheet - Page 2

• Manufacturer Part Number: UMN11NTN
• Description: DIODE SW 80V 100MA SOT-363 TR
• Manufacturer: Rohm Semiconductor

Specifications of UMN11NTN

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Forward Current If(av): 100mA
• Repetitive Reverse Voltage Vrrm Max: 80V
• Forward Voltage Vf Max: 1.2V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Operating: RoHS Compliant
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 0.3 A
• Max Surge Current: 4 A
• Configuration: Double Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
950
940
930
920
910
900
100
100
0.1
20
15
10
10
10
5
0
1
1
0.1
0
100 200 300 400 500 600 700 800 900 100
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=150℃
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:921.7m
AVE:3.50A
Ta=125℃
TIME:t(ms)
Ta=75℃
Ifsm
Ifsm
10
8.3ms
IF=100mA
Ta=25℃
n=30pcs
t
Ta=-25℃
1cyc
Ta=25℃
100
0
10000
1000
1000
0.01
100
100
100
10
0.1
90
80
70
60
50
40
30
20
10
10
10
9
8
7
6
5
4
3
2
1
0
0
1
1
0.001
0
10
REVERSE VOLTAGE：VR(V)
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
20
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:9.655nA
30
AVE:1.93ns
TIME:t(s)
Mounted on epoxy board
IM=10mA
40
1ms
Ta=150℃
300us
50
time
10
Ta=-25℃
Ta=75℃
Ta=25℃
60
Ta=25℃
VR=80V
n=10pcs
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
IF=100mA
Rth(j-c)
Rth(j-a)
Ta=125℃
70
1000
80
0.1
10
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
10
1
9
8
7
6
5
4
3
2
1
0
1
1
0
IFSM-CYCLE CHARACTERISTICS
AVE:0.97kV
C=200pF
R=0Ω
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
ESD DISPERSION MAP
Ct DISPERSION MAP
NUMBER OF CYCLES
5
AVE:1.081pF
Ifsm
10
Rev.B
10
AVE:2.54kV
C=100pF
R=1.5kΩ
8.3ms
UMN11N
1cyc
f=1MHz
15
Ta=25℃
n=10pcs
f=1MHz
8.3ms
VR=6V
100
20
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