BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 3
![DIODE ARRAY SW 200V SOT457R](/photos/1/38/13824/sc-74-6_sml.jpg)
BAS21AVD,165
Manufacturer Part Number
BAS21AVD,165
Description
DIODE ARRAY SW 200V SOT457R
Manufacturer
NXP Semiconductors
Datasheet
1.BAS19235.pdf
(10 pages)
Specifications of BAS21AVD,165
Package / Case
SC-74-6
Voltage - Dc Reverse (vr) (max)
200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
200 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
5 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Current - Average Rectified (io) (per Diode)
-
Diode Configuration
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059099165
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
RRM
R
tot
General purpose diodes
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
amb
t = 1 µs
t = 100 µs
t = 10 ms
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
BAS19; BAS20; BAS21
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
MIN.
120
200
250
100
150
200
200
625
9
3
1.7
250
+150
150
Product data sheet
MAX.
V
V
V
V
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT