BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 3

• Manufacturer Part Number: BAS21AVD,165
• Description: DIODE ARRAY SW 200V SOT457R
• Manufacturer: NXP Semiconductors

Specifications of BAS21AVD,165

• Package / Case: SC-74-6
• Voltage - Dc Reverse (vr) (max): 200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (vf) (max) @ If: -
• Current - Average Rectified (io) (per Diode): -
• Diode Configuration: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059099165

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
RRM
R
tot
General purpose diodes
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
amb
t = 1 µs
t = 100 µs
t = 10 ms
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
BAS19; BAS20; BAS21
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
MIN.
120
200
250
100
150
200
200
625
9
3
1.7
250
+150
150
Product data sheet
MAX.
V
V
V
V
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT