EMP11T2R Rohm Semiconductor, EMP11T2R Datasheet
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Manufacturer Part Number
EMP11T2R
Description
DIODE SWITCH 80V 100MA HS EMD6
Manufacturer
Rohm Semiconductor
Specifications of EMP11T2R
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-75-6, EMD6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Diodes
Switching diode
EMP11
Ultra high speed switching
1) Ultra small mold type. (EMD6)
2) High reliability
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current (Single)
Surge current （t=1us）
Power dissipation
Junction temperature
Storage temperature
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Features
Construction
Electrical characteristics (Ta=25°C)
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
JEITA : SC-75A Size
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
ROHM : EMD6
0.22±0.05
Symbol
Symbol
I
Tstg
V
surge
V
I
Pd
V
Ct
Io
Tj
trr
FM
I
dot (year week factory)
RM
R
R
F
(6)
(1)
0.5
1.6±0.1
1.0±0.1
(5)
(2)
0.5
1.7±0.05
Min.
4.0±0.1
-
-
-
-
-55 to +150
(4)
(3)
Limits
300
100
150
150
Typ.
80
80
2.0±0.05
1PIN
4
-
-
-
-
4.0±0.1
0.5±0.05
Max.
1.2
0.1
3.5
4
0.13±0.05
φ1.5
0～ 0.1
+0.1
−0
Unit
mW
Unit
mA
mA
µA
pF
℃
℃
ns
V
V
A
V
Land size figure (Unit : mm)
I
V
V
V
F
=100mA
R
R
R
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
φ0.8±0.1
Structure
Conditions
EMD6
Rev.D
0.25 0.15
0.4
0.3±0.1
0.65±0.1
0.5
1.0
0.3
EMP11
0.15
0.5
0.25
1/2
Related parts for EMP11T2R
EMP11T2R Summary of contents
Diodes Switching diode EMP11 Application Ultra high speed switching Features 1) Ultra small mold type. (EMD6) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average rectified ...
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ 10 Ta=150℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 900 Ta=25℃ IF=100mA 890 n=30pcs 880 870 860 AVE:870.1mV 850 VF DISPERSION MAP ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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