BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 5

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

NXP Semiconductors
BAV99_SER
Product data sheet
Fig 1.
Fig 3.
(mA)
(pF )
I
10
(1) T
(2) T
(3) T
(4) T
F
C
10
10
0.8
0.6
0.4
0.2
10
d
−1
1
3
2
0
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
voltage; typical values
0
Diode capacitance as a function of reverse
amb
amb
amb
amb
= 150 °C
= 85 °C
= 25 °C
= −40 °C
0.2
4
0.4
amb
(1)
= 25 °C
(2)
0.6
(3)
8
0.8
(4)
1.0
12
All information provided in this document is subject to legal disclaimers.
006aab132
V
1.2
R
V
mbg446
(V)
F
(V)
Rev. 8 — 18 November 2010
1.4
16
Fig 2.
Fig 4.
I
(μA)
FSM
(A)
I
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
10
R
10
10
10
10
−1
−2
−3
−4
−5
−1
1
1
2
2
0
1
Reverse current as a function of reverse
voltage; typical values
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
amb
amb
amb
amb
j
= 25 °C; prior to surge
= 150 °C
= 85 °C
= 25 °C
= −40 °C
20
10
40
High-speed switching diodes
10
BAV99 series
2
(1)
(2)
(3)
(4)
60
10
© NXP B.V. 2010. All rights reserved.
3
80
006aab133
t
p
V
(μs)
R
mbg704
(V)
100
10
4
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