HFA16TA60CPBF Vishay, HFA16TA60CPBF Datasheet - Page 7

• Manufacturer Part Number: HFA16TA60CPBF
• Description: DIODE HEXFRED 600V 8A TO220AB
• Manufacturer: Vishay
• Series: HEXFRED®r

Specifications of HFA16TA60CPBF

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.7V @ 8A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Current - Average Rectified (io) (per Diode): 8A (DC)
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 55ns
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.1 V
• Recovery Time: 55 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 60 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *HFA16TA60CPBF; VS-HFA16TA60CPBF; VS-HFA16TA60CPBF; VSHFA16TA60CPBF; VSHFA16TA60CPBF

DIMENSIONS in millimeters and inches
Notes
(1)
(2)
(3)
(4)
(5)
(6)
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Lead dimension and finish uncontrolled in L1
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
Dimension b1, b3 and c1 apply to base metal only
Controlling dimensions: inches
Thermal pad contour optional within dimensions E, H1, D2 and
E1
A1
A2
b1
b2
b3
D1
D2
c1
A
b
D
D
c
Lead tip
0.015
Q
D1
M
14.85
11.68
MIN.
MILLIMETERS
4.25
1.14
2.56
0.69
0.38
1.20
1.14
0.36
0.36
8.38
B
E2
1
A
2 x
(6)
M
e1
(7)
E
e
2
MAX.
15.25
12.88
3
4.65
1.40
2.92
1.01
0.97
1.73
1.73
0.61
0.56
9.02
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
A
Ø P
0.167
0.045
0.101
0.027
0.015
0.047
0.045
0.014
0.014
0.585
0.330
0.460
MIN.
Detail B
L
0.014
INCHES
C
M
B
MAX.
0.183
0.055
0.115
0.040
0.038
0.068
0.068
0.024
0.022
0.600
0.355
0.507
A
M
(6)
(7)
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
H1
c
NOTES
TO-220AB
4
4
4
3
6
A
A2
Seating
A
A
A1
B
plane
(7)
(8)
SYMBOL
(H1)
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
Ø P
H1
E1
E2
e1
L1
Q
E
e
L

Conforms to JEDEC outline TO-220AB
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View A - A
(E)
10.11
13.52
MILLIMETERS
MIN.
4.88
6.86
2.41
6.09
3.32
3.54
2.60
-
90° to 93°
Outline Dimensions
Vishay Semiconductors
E1 (6)
MAX.
10.51
14.02
8.89
2.67
5.28
6.48
3.82
3.73
0.76
3.00
D2
Base metal
Thermal pad
(6)
Section C - C and D - D
0.398
0.270
0.095
0.192
0.240
0.532
0.131
0.139
0.102
MIN.
c
-
90° to 93°
C
INCHES
3 x b
1
Detail B
(b, b2)
b1, b3
C
D
MAX.
0.414
0.350
0.030
0.105
0.208
0.255
0.552
0.150
0.147
0.118
2
D
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3 x b2
3
(4)
c1
Plating
NOTES
(4)
L1 (2)
3, 6
6, 7
6
7
2
1