MBRB3045CTPBF Vishay, MBRB3045CTPBF Datasheet - Page 3
![DIODE SCHOTTKY 45V 15A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
MBRB3045CTPBF
Manufacturer Part Number
MBRB3045CTPBF
Description
DIODE SCHOTTKY 45V 15A D2PAK
Manufacturer
Vishay
Datasheet
1.MBR3035CT-E345.pdf
(5 pages)
Specifications of MBRB3045CTPBF
Diode Configuration
1 Pair Common Cathode
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
760mV @ 30A
Current - Reverse Leakage @ Vr
1mA @ 45V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
45V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
30 A
Max Surge Current
1020 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.76 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
45V
Forward Current If(av)
30A
Forward Voltage Vf Max
760mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*MBRB3045CTPBF
VS-MBRB3045CTPBF
VS-MBRB3045CTPBF
VSMBRB3045CTPBF
VSMBRB3045CTPBF
VS-MBRB3045CTPBF
VS-MBRB3045CTPBF
VSMBRB3045CTPBF
VSMBRB3045CTPBF
Document Number: 88677
Revision: 08-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0.001
0.01
100
0.01
100
1.0
1.0
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
0
0
Percent of Rated Peak Reverse Voltage (%)
0.1
Instantaneous Forward Voltage (V)
T
0.2
20
J
= 150 °C
T
0.3
J
= 125 °C
0.4
T
40
J
= 75 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
0.5
For technical questions within your region, please contact one of the following:
T
J
J
= 25 °C
= 25 °C
0.6
60
0.7
0.8
80
0.9
1.0
100
MBR(F,B)3035CT & MBR(F,B)3045CT
10 000
Figure 5. Typical Transient Thermal Impedance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
1
0.01
0.1
Vishay General Semiconductor
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3