MBRB20100CTPBF Vishay, MBRB20100CTPBF Datasheet

DIODE SCHOTTKY 100V 10A D2PAK

MBRB20100CTPBF

Manufacturer Part Number
MBRB20100CTPBF
Description
DIODE SCHOTTKY 100V 10A D2PAK
Manufacturer
Vishay

Specifications of MBRB20100CTPBF

Diode Configuration
1 Pair Common Cathode
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
800mV @ 10A
Current - Reverse Leakage @ Vr
100µA @ 100V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
20 A
Max Surge Current
850 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.95 V
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
20A
Forward Voltage Vf Max
950mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
*MBRB20100CTPBF
VS-MBRB20100CTPBF
VS-MBRB20100CTPBF
VSMBRB20100CTPBF
VSMBRB20100CTPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBRB20100CTPBF
Quantity:
25 780
Company:
Part Number:
MBRB20100CTPBF
Quantity:
70 000
Company:
Part Number:
MBRB20100CTPBF
Quantity:
70 000
Document Number: 89033
Revision: 24-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
Peak repetitive reverse current at t
T
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
J
= 38 °C ± 2 °C per diode
J
MBR2090CT
MBR20100CT
PIN 1
PIN 3
= 25 °C, L = 60 mH per diode
TO-220AB
Dual Common-Cathode High-Voltage Schottky Rectifier
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
F
PIN 2
CASE
1
K
MBRB2090CT
MBRB20100CT
PIN 2
PIN 1
TO-263AB
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
p
C
1
= 2 µs, 1 kHz,
®
= 25 °C unless otherwise noted)
MBRF2090CT
MBRF20100CT
PIN 1
PIN 3
HEATSINK
2
K
ITO-220AB
90 V, 100 V
2 x 10 A
150 °C
0.65 V
150 A
C
= 133 °C
PIN 2
1
New Product
total device
per diode
2
MBR(F,B)2090CT & MBR(F,B)20100CT
3
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
SYMBOL
T
peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AB and ITO-220AB
package)
accordance to WEEE 2002/96/EC
V
J
V
I
dV/dt
I
V
I
F(AV)
E
, T
V
RRM
FSM
RWM
RRM
DC
AS
AC
STG
PDD-Europe@vishay.com
Vishay General Semiconductor
MBR2090CT
90
90
90
- 65 to + 150
10 000
1500
150
130
0.5
20
10
MBR20100CT
100
100
100
www.vishay.com
UNIT
V/µs
mJ
°C
V
V
V
A
A
A
V
1

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MBRB20100CTPBF Summary of contents

Page 1

... Mounting Torque: 10 in-lbs maximum SYMBOL V RRM V RWM V DC total device = 133 ° F(AV) per diode I FSM RRM dV/ STG V AC PDD-Europe@vishay.com Vishay General Semiconductor MBR2090CT MBR20100CT 90 100 90 100 90 100 20 10 150 130 0.5 10 000 - 150 1500 www.vishay.com UNIT V/µs °C V ...

Page 2

... MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage per diode Maximum reverse current per diode at working peak (2) reverse voltage Notes (1) Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER ...

Page 3

... Figure 6. Typical Transient Thermal Impedance Per Diode 10 1 0.1 0.01 0.001 80 90 100 0.1 Figure 7. Typical Transient Thermal Impedance Per Diode = 25 ° mVp-p 100 PDD-Europe@vishay.com Vishay General Semiconductor Junction to Case MBR(B) 0 100 t - Pulse Duration (s) Junction to Case MBRF 100 Pulse Duration (s) www.vishay.com ...

Page 4

... MBR(F,B)2090CT & MBR(F,B)20100CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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