MBR30H60CT-E3/45 Vishay, MBR30H60CT-E3/45 Datasheet

DIODE SCHOT 30A 60V DUAL TO220-3

MBR30H60CT-E3/45

Manufacturer Part Number
MBR30H60CT-E3/45
Description
DIODE SCHOT 30A 60V DUAL TO220-3
Manufacturer
Vishay
Datasheet

Specifications of MBR30H60CT-E3/45

Voltage - Forward (vf) (max) @ If
760mV @ 30A
Current - Reverse Leakage @ Vr
1mA @ 60V
Current - Average Rectified (io) (per Diode)
15A
Voltage - Dc Reverse (vr) (max)
60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
30 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.83 V
Maximum Reverse Leakage Current
60 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88866
Revision: 31-Jul-08
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified
current (Fig. 1)
Non-repetitive avalanche energy per diode
at 25 °C, I
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at t
Peak non-repetitive reverse energy
(8/20 µs waveform)
p
MBR30HxxCT
= 2.0 µs, 1 kHz
PIN 1
PIN 3
TO-220AB
AS
T
V
I
J
I
F(AV)
= 4 A, L = 10 mH
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
PIN 2
CASE
MBRB30HxxCT
PIN 2
Dual Common-Cathode Schottky Rectifier
PIN 1
1
K
TO-263AB
2
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
3
For technical questions within your region, please contact one of the following:
C
total device
per diode
1
= 25 °C unless otherwise noted)
HEATSINK
K
2
MBRF30HxxCT
PIN 1
PIN 3
ITO-220AB
0.56 V, 0.59 V
80 µA, 60 µA
35 V to 60 V
2 x 15 A
175 °C
150 A
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
V
V
E
I
I
I
V
F(AV)
E
RRM
RWM
FSM
PIN 2
RRM
RSM
DC
AS
1
2
3
35
35
35
FEATURES
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB and
• Component in accordance to RoHS 2002/95/EC
1.0
25
peak of 245 °C (for TO-263AB package)
ITO-220AB package)
and WEEE 2002/96/EC
45
45
45
Vishay General Semiconductor
150
30
15
80
50
50
50
0.5
20
60
60
60
www.vishay.com
UNIT
mJ
mJ
V
V
V
A
A
A
1

Related parts for MBR30H60CT-E3/45

MBR30H60CT-E3/45 Summary of contents

Page 1

... A 1A whisker test, HE3 suffix for high reliability grade 0.56 V, 0.59 V (AEC-Q101 qualified), meets JESD 201 class 2 80 µA, 60 µA whisker test 175 °C Polarity: As marked Mounting Torque: 10 in-lbs maximum SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT V 35 RRM V 35 RWM V 35 ...

Page 2

... MBR30H45CTHE3/45 ITO-220AB MBRF30H45CTHE3/45 TO-263AB MBRB30H45CTHE3/45 TO-263AB MBRB30H45CTHE3/81 Note: (1) Automotive grade AEC-Q101 qualified www.vishay.com For technical questions within your region, please contact one of the following: 2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT V C dV/ STG °C unless otherwise noted) C TEST CONDITIONS SYMBOL TYP ...

Page 3

... Figure 6. Typical Transient Thermal Impedance Per Diode Vishay General Semiconductor T = 150 ° 125 °C J MBR30H35CT - MBR30H45CT MBR30H50CT - MBR30H60CT ° Percent of Rated Peak Reverse Voltage (%) ° 1.0 MHz mVp-p sig MBR30H35CT - MBR30H45CT MBR30H50CT - MBR30H60CT 0 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode 1 0.01 0 Pulse Duration (s) 100 100 10 www.vishay.com 3 ...

Page 4

... MBR(F,B)30H35CT thru MBR(F,B)30H60CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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