MBR20H100CT-E3/45 Vishay, MBR20H100CT-E3/45 Datasheet - Page 3

• Manufacturer Part Number: MBR20H100CT-E3/45
• Description: DIODE SCHOTT 20A 100V DUAL TO220
• Manufacturer: Vishay

Specifications of MBR20H100CT-E3/45

• Voltage - Forward (vf) (max) @ If: 840mV @ 20A
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 20 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.88 V
• Maximum Reverse Leakage Current: 4.5 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88673
Revision: 08-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.1
20
T
J
Percent of Rated Peak Reverse Voltage (%)
0.2
T
= 150 °C
J
= 175 °C
Instantaneous Forward Voltage (V)
0.3
40
0.4
0.5
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60
0.6
T
J
T
= 25 °C
J
= 100 °C
0.7
T
T
T
T
J
J
J
J
= 150 °C
= 125 °C
= 100 °C
= 25 °C
T
80
J
0.8
= 125 °C
0.9
100
1.0
MBR(F,B)20H90CT & MBR(F,B)20H100CT
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
1
10
1
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100
10
3