UGB18DCT-E3/45 Vishay, UGB18DCT-E3/45 Datasheet - Page 3

DIODE 18A 200V 20NS DUAL UF

UGB18DCT-E3/45

Manufacturer Part Number
UGB18DCT-E3/45
Description
DIODE 18A 200V 20NS DUAL UF
Manufacturer
Vishay
Datasheet

Specifications of UGB18DCT-E3/45

Diode Configuration
1 Pair Common Cathode
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.1V @ 9A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
18A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
30ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
18A
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
20ns
Forward Surge
RoHS Compliant
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.2 V at 20 A
Recovery Time
30 ns
Forward Continuous Current
18 A
Max Surge Current
175 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88759
Revision: 09-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
1000
0.01
100
100
0.1
24
20
16
12
10
10
8
4
0
1
0.4
0
1
Figure 1. Forward Current Derating Curve
25
0.6
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
50
Case Temperature (°C)
Current Per Diode
0.8
75
T
8.3 ms Single Half Sine-Wave
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
C
For technical questions within your region, please contact one of the following:
1.0
= 105 °C
10
Resistive or Inductive Load
100
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.2
125
1.4
150
175
100
1.6
UG(F,B)18ACT thru UG(F,B)18DCT
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
Figure 5. Reverse Switching Characteristics Per Diode
100
100
0.1
10
10
60
50
40
30
20
10
0
1
1
Figure 6. Typical Junction Capacitance Per Diode
0.1
0
0
I
V
Vishay General Semiconductor
F
R
Percent of Rated Peak Reverse Voltage (%)
= 9.0 A
= 30 V
25
20
T
J
Junction Temperature (°C)
T
= 25 °C
T
dI/dt =
J
50
J
= 100 °C
= 125 °C
Reverse Voltage (V)
1
40
75
100
60
150 A/µs
10
125
T
f = 1.0 MHz
V
J
100 A/µs
sig
= 125 °C
150 A/µs
20 A/µs
20 A/µs
100 A/µs
50 A/µs
50 A/µs
= 50 mVp-p
80
150
www.vishay.com
t
Q
rr
rr
175
100
100
3

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