BYQ28EF-100-E3/45 Vishay, BYQ28EF-100-E3/45 Datasheet - Page 3
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BYQ28EF-100-E3/45
Manufacturer Part Number
BYQ28EF-100-E3/45
Description
DIODE UFAST DUAL 100V ITO-220AB
Manufacturer
Vishay
Datasheet
1.BYQ28E-100-E345.pdf
(5 pages)
Specifications of BYQ28EF-100-E3/45
Voltage - Forward (vf) (max) @ If
1.1V @ 5A
Current - Reverse Leakage @ Vr
10µA @ 100V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
ITO-220AB
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
100 V
Forward Voltage Drop
1.25 V
Recovery Time
25 ns
Forward Continuous Current
10 A
Max Surge Current
55 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88549
Revision: 07-Jan-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
100
100
0.1
15
10
10
10
5
0
1
1
0.2
0
1
Pulse Width = 300 µs
1 % Duty Cycle
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
0.4
Instantaneous Forward Voltage (V)
T
J
Number of Cycles at 60 Hz
= 125 °C
Case Temperature (°C)
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Current Per Diode
50
0.6
T
T
8.3 ms Single Half Sine-Wave
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
C
= 25 °C
For technical questions within your region, please contact one of the following:
0.8
= 105 °C
10
T
J
= 100 °C
100
1.0
1.2
150
100
1.4
1000
Figure 5. Reverse Switching Characteristics Per Diode
100
100
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
50
40
30
20
10
0
1
1
Figure 6. Typical Junction Capacitance Per Diode
25
0.1
0
at 1 A, 100 A/µs
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
at 5 A, 50 A/µs
at 2 A, 20 A/µs
20
at 2 A, 20 A/µs
50
Junction Temperature (°C)
Reverse Voltage (V)
1
40
T
J
at 5 A, 50 A/µs
= 125 °C
T
J
at 1 A, 100 A/µs
75
T
= 100 °C
J
= 25 °C
60
10
T
f = 1.0 MHz
V
J
100
sig
= 125 °C
= 50 mVp-p
80
www.vishay.com
t
Q
rr
rr
100
125
100
3