SS12P4CHM3/86A Vishay, SS12P4CHM3/86A Datasheet - Page 3

• Manufacturer Part Number: SS12P4CHM3/86A
• Description: DIODE SCHOTTKY 12A 40V SMPC
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of SS12P4CHM3/86A

• Voltage - Forward (vf) (max) @ If: 520mV @ 6A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Current - Average Rectified (io) (per Diode): 6A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 89141
Revision: 24-Nov-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 2. Forward Power Loss Characteristics Per Diode
0.01
100
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.1
10
10
0
1
1
10
0
0
T
A
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
0.1
20
1
T
Instantaneous Forward Voltage (V)
A
0.2
= 100 °C
30
Average Forward Current (A)
T
A
D = 0.1
= 125 °C
2
D = 0.2 D = 0.3
0.3
40
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3
0.4
50
T
For technical questions within your region, please contact one of the following:
A
= 25 °C
0.5
60
4
D = 0.5
D = t
0.6
70
5
p
T
/T
0.7
D = 0.8
A
T
80
= 100 °C
A
D = 1.0
= 25 °C
T
6
t
0.8
p
90
100
0.9
7
Figure 6. Typical Transient Thermal Impedance Per Device
10 000
1000
100
100
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
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Junction to Ambient
Vishay General Semiconductor
0.1
Reverse Voltage (V)
t - Pulse Duration (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
SS12P4C
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p-p
100
100
3