SS12P4CHM3/86A Vishay, SS12P4CHM3/86A Datasheet - Page 3

• Manufacturer Part Number: SS12P4CHM3/86A
• Description: DIODE SCHOTTKY 12A 40V SMPC
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of SS12P4CHM3/86A

• Voltage - Forward (vf) (max) @ If: 520mV @ 6A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Current - Average Rectified (io) (per Diode): 6A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 89141
Revision: 19-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
0.01
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.1
10
10
0
1
1
10
0
0
T
A
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
0.1
20
1
T
Instantaneous Forward Voltage (V)
A
0.2
30
= 100 °C
Average Forward Current (A)
T
A
D = 0.1
= 125 °C
D = 0.2 D = 0.3
2
0.3
40
[e-mail], [e-mail],
3
0.4
50
T
For technical questions within your region, please contact one of the following:
A
= 25 °C
0.5
60
4
D = 0.5
D = t
0.6
70
5
p
T
/T
D = 0.8
0.7
A
T
80
= 100 °C
A
D = 1.0
= 25 °C
This document is subject to change without notice.
T
6
t
p
0.8
90
100
0.9
7
New Product
10 000
10 000
1000
1000
Fig. 6 - Typical Transient IThermal mpedance Per Diode
100
100
10
10
0.1
0.1
Fig. 5 - Typical Junction Capacitance Per Diode
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Vishay General Semiconductor
Reverse Voltage (V)
Reverse Voltage (V)
1
1
www.vishay.com/doc?91000
10
10
T
f = 1.0 MHz
V
T
f = 1.0 MHz
V
J
J
sig
sig
= 25 °C
= 25 °C
= 50 mV
= 50 mV
SS12P4C
www.vishay.com
p-p
p-p
100
100
3