MMBD4448HTW-7 Diodes Inc, MMBD4448HTW-7 Datasheet - Page 2

• Manufacturer Part Number: MMBD4448HTW-7
• Description: DIODE SW ARRAY 80V 200MW SOT363
• Manufacturer: Diodes Inc

Specifications of MMBD4448HTW-7

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 250mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMBD4448HTWDITR; MMBD4448HTWTR; MMBD4448HTWTR

Electrical Characteristics
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Rever e Recovery
Notes:
MMBD4448HCQW /AQW
/ADW /CDW /SDW /TW
Document number: DS30153 Rev. 16 - 2
s
1,000
100
2.5
1.5
0.5
0.1
5. Short duration pulse test used to minimize self-heating effect.
10
3
2
0
1
1
0
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Typical Capacitance vs. Reverse Voltage
F
Time
Fig. 1 Typical Forward Characteristics
V , REVERSE VOLTAGE (V)
10
Characteristic
0.4
R
20
0.8
@T
A
= 25°C unless otherwise specified
30
1.2
40
1.6
www.diodes.com
Symbol
V
2 of 4
(BR)R
C
V
I
t
R
rr
F
T
10,000
1,000
0.62
Min
100
200
150
80
⎯
⎯
⎯
⎯
⎯
⎯
250
100
10
0.1
50
1
0
0
0
Fig. 4 Power Derating Curve, Total Package
0.855
Max
0.72
1.25
100
1.0
3.5
4.0
⎯
50
30
25
Fig. 2 Typical Reverse Characteristics
T , AMBIENT TEMPERATURE ( C)
40
A
20
V , REVERSE VOLTAGE (V)
R
Unit
MMBD4448HCQW /AQW
nA
μA
μA
nA
pF
ns
V
V
80
40
/ADW /CDW /SDW /TW
T = 75ºC
T = 125ºC
T = 25ºC
A
T = 0ºC
T = -40ºC
A
A
A
A
I
I
I
I
I
V
V
V
V
V
V
R
F
F
F
F
R
R
R
R
R
R
= 5.0mA
= 10mA
= 100mA
= 150mA
= 100μA
120
= 70V
= 75V, T
= 25V, T
= 20V
= 6V, f = 1.0MHz
= 6V, I
60
Test Condition
F
= 5mA
j
j
= 150°C
= 150°C
160
°
80
© Diodes Incorporated
December 2007
200
100