BLF6G38-10 /T3 NXP Semiconductors, BLF6G38-10 /T3 Datasheet - Page 10

• Manufacturer Part Number: BLF6G38-10 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10,118

NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Table 10.
f
(GHz)
BLF6G38-10
3.40
3.45
3.50
3.55
3.60
BLF6G38-10G
3.40
3.45
3.50
3.55
3.60
Measured test circuit impedances
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Z
( )
12.61 - j23.96
14.16 - j22.23
16.00 - j21.74
17.43 - j22.91
17.11 - j25.43
19.33 - j22.54
21.20 - j21.65
23.02 - j22.41
23.70 - j24.95
21.98 - j28.26
i
WiMAX power LDMOS transistor
Z
( )
5.21 - j6.31
5.47 - j6.01
5.72 - j5.87
5.90 - j5.91
5.92 - j6.09
4.71 - j7.09
4.75 - j6.82
4.72 - j6.65
4.60 - j6.55
4.36 - j6.47
o
© NXP B.V. 2009. All rights reserved.
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