BLF6G27LS-135 NXP Semiconductors, BLF6G27LS-135 Datasheet - Page 7

• Manufacturer Part Number: BLF6G27LS-135
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-135

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.135 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27LS-135,112

NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Component
C1, C3, C4, C10 multilayer ceramic chip capacitor
C2
C5
C9
C6, C7
C8
L1
R1
R2
List of components
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
SMD resistor
SMD resistor
Figure
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit
10.
V
GG
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
Table 9
for list of components.
C2
R1
BLF6G27-135; BLF6G27LS-135
BLF6G27-135
Rev. 02 — 26 May 2008
input-rev 1A
C1
30RF35
NXP
Value
8.2 pF
4.7 F; 50 V
10 F; 50 V
1.5 F; 50 V
100 nF
470 F; 63 V
-
5.1
9.1
C3
Remarks
ATC 100B or equivalent
TDK C4532X7R1H475M or equivalent
TDK C5750X7R1H106M or equivalent
TDK C3225X7R1H155M or equivalent
Vishay VJ1206Y104KXB or equivalent
ATC 100B or equivalent
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
SMD 1206
SMD 1206
WiMAX power LDMOS transistor
C4
C5 C6 C7
output-rev 1A
BLF6G27-135
C10
© NXP B.V. 2008. All rights reserved.
30RF35
NXP
L1
R2
001aah650
r
C8
= 3.5 and
+
V
DD
C9
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