BLF6G20LS-140 /T3 NXP Semiconductors, BLF6G20LS-140 /T3 Datasheet - Page 2
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BLF6G20LS-140 /T3
Manufacturer Part Number
BLF6G20LS-140 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G20LS-140118.pdf
(8 pages)
Specifications of BLF6G20LS-140 /T3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
39 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
35.5W(Typ)
Power Gain (typ)@vds
16.5@28VdB
Frequency (min)
1.93GHz
Frequency (max)
1.99GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13.5S
Drain Source Resistance (max)
70(Typ)@6.15Vmohm
Reverse Capacitance (typ)
3.57@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
30%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G20LS-140,118
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G20LS-140_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G20LS-140 -
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
Rev. 01 — 27 February 2009
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
Simplified outline
Conditions
T
case
BLF6G20LS-140
= 80 C; P
1
2
3
Power LDMOS transistor
L
= 35 W
Graphical symbol
Min
-
-
-
© NXP B.V. 2009. All rights reserved.
0.5
65
2
Max
65
+13
39
+150
225
sym112
Typ
0.49 K/W
Version
SOT502B
1
3
Unit
Unit
V
V
A
2 of 8
C
C