BLF6G38-10G /T3 NXP Semiconductors, BLF6G38-10G /T3 Datasheet - Page 7
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BLF6G38-10G /T3
Manufacturer Part Number
BLF6G38-10G /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-10G118.pdf
(15 pages)
Specifications of BLF6G38-10G /T3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.1 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2W(Typ)
Power Gain (typ)@vds
14@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
0.8(Min)S
Drain Source Resistance (max)
1256@6.15Vmohm
Reverse Capacitance (typ)
3.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
20%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-10G,118
NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 8.
(dB)
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
p
20
18
16
14
12
10
10
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
DS
1
= 28 V; I
Dq
= 130 mA; single carrier IS-95;
1
(2)
(3)
(1)
P
L
(W)
001aaj369
Rev. 01 — 3 February 2009
10
BLF6G38-10; BLF6G38-10G
Fig 9.
(W)
P
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
0.20
0.16
0.12
0.08
0.04
i
0
10
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
1
DS
= 28 V; I
Dq
WiMAX power LDMOS transistor
= 130 mA; single carrier IS-95;
1
(3)
(2)
(1)
P
L
(W)
© NXP B.V. 2009. All rights reserved.
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