NE6500379A-T1 CEL, NE6500379A-T1 Datasheet

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NE6500379A-T1

Manufacturer Part Number
NE6500379A-T1
Description
RF GaAs L&S Band GaAs MESFET
Manufacturer
CEL
Datasheet

Specifications of NE6500379A-T1

Mounting Style
SMD/SMT
Gate-source Breakdown Voltage
- 7 V
Continuous Drain Current
5.6 A
Power Dissipation
21 W
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
NEC's NE6500379A is a 3 W GaAs MESFET designed for
medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-
2000, and return path MMDS transmitter applications. It is
capable of delivering 3 Watts of output power with high linear
gain, high efficiency and excellent linearity. Reliability and
performance uniformity are assured by NEC's stringent qual-
ity and control procedures
ELECTRICAL CHARACTERISTICS
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• USABLE TO 2.7 GHz:
• HIGH OUTPUT POWER:
• HIGH LINEAR GAIN:
• LOW THERMAL RESISTANCE:
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
Available on Tape and Reel
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
35 dBm TYP
10 dB TYP at 1.9 GHz
5 C/W
reject for several samples.
SYMBOLS
BV
η
P
I
R
G
DSS
V
ADD
I
1dB
D
TH
GD
P
L
Power Out at 1dB Gain Compression
Linear Gain
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
Gate-to-Drain Breakdown Voltage
MEDIUM POWER GaAs MESFET
CHARACTERISTICS
1
PACKAGE OUTLINE
PART NUMBER
(T
C
NEC'
= 25°C)
S
UNITS
°C/W
dBm
dB
%
A
A
V
V
3W, L/S-BAND
OUTLINE DIMENSIONS
Note: Unless otherwise specified, tolerance is ±0.2 mm
Gate
MIN
-3.6
9.0
17
California Eastern Laboratories
4.2 MAX
5.7 MAX
NE6500379A
Source
0.4 – 0.15
TYP
35.0
10.0
79A
-2.6
1.0
4.5
50
PACKAGE OUTLINE 79A
5
Drain
MAX
-1.6
6
NE6500379A
(Units in mm)
I
DSQ
f = 1.9 GHz, V
V
V
DS
TEST CONDITIONS
DS
BOTTOM VIEW
= 500 mA (RF OFF)
Channel to Case
= 2.5 V; I
= 2.5 V; V
I
Rg = 30 Ω
GD
1.5 – 0.2
3.6 – 0.2
= 21 mA
0.8 MAX
DS
DS
Source
GS
= 21 mA
= 6.0 V
= 0 V
2

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NE6500379A-T1 Summary of contents

Page 1

... TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5 C/W DESCRIPTION NEC's NE6500379A GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT- 2000, and return path MMDS transmitter applications capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability and ...

Page 2

... SYMBOLS UNITS RATINGS -7 5.6 COMP °C 150 -65 to +150 °C ORDERING INFORMATION PART NUMBER NE6500379A-T1 NE6500379A (T = 25°C) A 150 (°C) 1.00 0.8 0.6 0.4 0.2 0.00 -1.50 PARAMETERS UNITS TYP Drain to Source Voltage V 6.0 Channel Temperature °C Gain Compression dB QTY 1 K/Reel Bulk, 50 piece min ...

Page 3

... Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 S11 4.0 GHz j10 S22 4.0 GHz 100 S11 0.5 GHz S22 0.5 GHz -j10 -j25 -j50 NE6500379A 500 FREQUENCY S 11 GHz MAG ANG 0.50 0.966 -174.30 0.60 0.967 -177.11 0.70 0.965 -179 ...

Page 4

NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -2.585 RG VTOSC 0 RD ALPHA 3 RS BETA 1.28 RGMET GAMMA 0 KF GAMMADC (2) 0.035 AF Q 1.7 TNOM DELTA 0.02 XTI VBI 0 ...

Page 5

... APPLICATION CIRCUIT (1.93 - 1.99 GHz C11 P1 GND C13 C11 C9 J1 C14 RF Input L = .200 .050 NE6500379A PARTS LIST 1 TF-100637 4 2 MA101J C2 MCR03J200 R1 2 100A470CP150X C1, C14 1 100A4R3CP150X C4 1 100A5R6CP150X C5 1 100A0R5CP150X C6 1 100A0R8CP150X C7 2 TAJB475K010R C12, C13 2 GRM40X7R104K025BL C10, C11 2 GRM40C0G102J050BD C8 NE6500379A U1 1 703401 ...

Page 6

... NE6500379A P.C.B. LAYOUT (Units in mm) FOR 79A PACKAGE 4.0 1.7 Drain Source 0.5 0.5 6.1 TYPICAL APPLICATION CIRCUIT PERFORMANCE at V GAIN AND PAE vs. OUTPUT POWER 1.96 GHz Gain Gain, I PAE, I PAE Output Power, P (dBm) OUT GAIN AND SATURATION POWER vs. FREQUENCY dBm for Gain, 23 dBm for P ...

Page 7

... I = 100 mA DSQ - 200 mA DSQ I = 400 mA DSQ I = 600 mA DSQ I = 800 mA DSQ - (dBm) OUT NE6500379A = 3 V and THIRD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER 1.96 GHz Total Output Power, P (dBm) OUT ACPR vs. OUTPUT POWER 1.96 GHz ACPR1 64 CH IS95 CDMA 885KHz 25 27 ...

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