BFP 450 E6327 Infineon Technologies, BFP 450 E6327 Datasheet - Page 8

RF Bipolar Small Signal TRANS GP BJT NPN 4.5V 0.1A

BFP 450 E6327

Manufacturer Part Number
BFP 450 E6327
Description
RF Bipolar Small Signal TRANS GP BJT NPN 4.5V 0.1A
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 450 E6327

Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
100 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450E6327XT
2
Table 1
Parameter
Collector emitter voltage
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
1) T
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
S
is the soldering point temperature. T
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Maximum Ratings
Maximum Ratings
1)
Symbol
V
V
V
V
I
I
P
T
T
C
B
J
Stg
CEO
CES
CBO
EBO
tot
S
measured on the emitter lead at the soldering point of the pcb.
Values
Min.
-65
8
150
Max.
4.5
4.1
15
15
1.5
170
10
500
150
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
Note / Test Condition
Open base
T
T
Emitter / base shortened
Open emitter
Open collector
T
Revision 1.0, 2010-10-22
A
A
S
= 25 °C
= -55 °C
≤ 90 °C
Maximum Ratings
BFP450

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