NESG2021M05 CEL, NESG2021M05 Datasheet

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NESG2021M05

Manufacturer Part Number
NESG2021M05
Description
RF Germanium RO 551-NESG2021M05-A
Manufacturer
CEL
Datasheet

Specifications of NESG2021M05

Mounting Style
SMD/SMT
Power Dissipation
175 mW
Package / Case
M05
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG2021M05
Manufacturer:
NEC
Quantity:
20 000
Part Number:
NESG2021M05-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
NESG2021M05-T1
Manufacturer:
NEC
Quantity:
20 000
Part Number:
NESG2021M05-T1-A
Manufacturer:
TI
Quantity:
7
Part Number:
NESG2021M05-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
Notes:
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
• LOW NOISE FIGURE:
• HIGH MAXIMUM STABLE GAIN:
• LOW PROFILE M05 PACKAGE:
• Pb Free
FEATURES
V
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
MSG = 22.5 dB at 2 GHz
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
CEO
1. MSG =
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
SYMBOLS
the guard pin.
|S
= 5 V (Absolute Maximum)
MSG
OIP
P
I
I
h
NF
NF
C
CBO
EBO
G
G
21E
f
1dB
FE
T
re
a
a
3
|
2
S
S
21
12
Noise Figure at V
Z
Associated Gain at V
Z
Noise Figure at V
Z
Associated Gain at V
Z
Maximum Stable Gain
Insertion Power Gain at V
Output Power at 1dB Compression Point at
V
Output 3rd Order Intercept Point at V
Gain Bandwidth Product at V
Reverse Transfer Capacitance
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
S
S
S
S
CE
HIGH FREQUENCY TRANSISTOR
= Z
= Z
= Z
= Z
= 3 V, I
SOPT
SOPT
SOPT
SOPT
, ZL = Z
, ZL = Z
, ZL = Z
, ZL = Z
C
= 12 mA, f = 2 GHz
PARAMETERS AND CONDITIONS
3
CE
CE
at V
LOPT
LOPT
LOPT
LOPT
= 2 V, I
= 2 V, I
CE
CE
PACKAGE OUTLINE
1
CE
at V
= 2 V, I
= 2 V, I
PART NUMBER
= 2 V, I
CE
EB
C
C
CE
CB
= 3 V, I
CE
= 3 mA, f = 5.2 GHz,
= 3 mA, f = 2 GHz,
= 1 V, I
(T
2
= 3 V, I
C
C
= 5V, I
at V
= 3 V, I
C
A
= 3 mA, f = 5.2 GHz,
= 3 mA, f = 2 GHz,
= 5 mA
= 25°C)
C
CB
C
CE
C
= 10 mA, f = 2 GHz
E
= 0
= 2 V, I
C
= 10 mA, f = 2 GHz
= 0
= 3 V, I
= 10 mA, f = 2 GHz
NEC's NPN SiGe
C
C
= 0 mA, f = 1 GHz
= 12 mA, f = 2 GHz
DESCRIPTION
NEC's NESG2021M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
M05
California Eastern Laboratories
UNITS
dBm
dBm
GHz
dB
dB
dB
dB
dB
dB
pF
nA
nA
15.0
20.0
17.0
MIN
130
NESG2021M05
20
NESG2021M05
M05
TYP
10.0
18.0
22.5
19.0
17.0
190
1.3
0.9
9.0
0.1
25
MAX
100
100
260
1.2
0.2

Related parts for NESG2021M05

NESG2021M05 Summary of contents

Page 1

... Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ NEC's NPN SiGe M05 DESCRIPTION NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ...

Page 2

... SYMBOLS V 13 j-c V 5 175 ORDERING INFORMATION °C 150 PART NUMBER °C -65 to +150 NESG2021M05-T1-A 3 kpcs/reel • Pb Free (T = 25°C) A 125 150 (°C) A 0.9 1.0 (V) BE PARAMETERS UNITS Junction to Case Resistance °C/W QUANTITY SUPPLYING FORM • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape • ...

Page 3

TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 Base to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 1 000 ...

Page 4

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 ...

Page 5

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MSG MAG 21e Collector Current, I INSERTION POWER GAIN, MAG, ...

Page 6

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 20 MAG 21e Collector Current INSERTION POWER ...

Page 7

TYPICAL PERFORMANCE CURVES OUTPUT POWER, COLLECTOR CUR- RENT vs. INPUT POWER GHz (RF OFF out -20 -15 -10 -5 Collector ...

Page 8

TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current NOISE FIGURE, ASSOCIATED GAIN vs. ...

Page 9

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 NESG2021M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.946 -10.22 0.400 0.939 -21.17 0.600 0.899 -31.03 0.800 0.870 -41.43 1.000 0.836 -50.89 1.200 0.797 -60.01 1.400 0.768 -68.73 1.600 0.734 -77.22 1.800 ...

Page 10

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 NESG2021M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.835 -18.33 0.400 0.800 -36.01 0.600 0.710 -50.52 0.800 0.652 -64.61 1.000 0.599 -76.81 1.200 0.547 -88.10 1.400 0.499 -98.31 1.600 0.462 -108.24 1.800 ...

Page 11

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 50 -j10 -j25 -j50 NESG2021M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.844 -16.85 0.400 0.811 -32.92 0.600 0.726 -46.53 0.800 0.668 -59.65 1.000 0.613 -71.14 1.200 0.560 -81.77 1.400 0.510 -91.34 1.600 0.469 -100.95 1.800 ...

Page 12

OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M05 FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD 2.05±0.1 1.25±0.1 3 2.0 ±0.1 4 +0.1 0.30 -0.05 0.59±0.05 PIN CONNECTIONS 1. Base 2. Emitter 3. Collector 4. Emitter 2 0.65 1.30 0.65 1 ...

Page 13

... CEPKG EPKG C BEPKG Emitter ADDITIONAL PARAMETERS (1) Parameters Q1 0.108 0.8 4e- 0 1.11 MODEL TEST CONDITIONS 1.3 Frequency: 5.2 Bias: Date Collecto r NESG2021M05 C 0.001 0.03 pF CBPKG 0.001 pF CEPKG C 0.03 pF BEPKG L 0.9 nH BPKG L 1.2 nH CPKG L 0.17 nH EPKG 0 GHz 09/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. ...

Page 14

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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