NESG2101M05-T1 CEL, NESG2101M05-T1 Datasheet - Page 9

• Manufacturer Part Number: NESG2101M05-T1
• Description: RF Germanium NPN SiGe High Freq
• Manufacturer: CEL

Specifications of NESG2101M05-T1

• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Package / Case: M05
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
5
4
3
2
1
0
4
3
2
1
0
4
3
2
1
0
1
1
1
V
f = 1 GHz
V
f = 3 GHz
V
f = 2 GHz
NOISE FIGURE, ASSOCIATED GAIN
CE
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
CE
CE
= 4 V
= 2 V
= 4 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
10
10
10
NF
G
G
NF
G
NF
a
a
a
C
C
C
(mA)
(mA)
(mA)
100
100
100
(T
25
20
15
10
5
0
20
15
10
5
0
20
15
10
5
0
A
= 25°C)
4
3
2
1
0
4
3
2
1
0
5
4
3
2
1
0
1
1
1
V
f = 3 GHz
V
f = 2 GHz
V
f = 1 GHz
CE
CE =
CE
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
NOISE FIGURE, ASSOCIATED GAIN
= 3 V
= 3 V
3 V
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
Collector Current, I
10
10
10
G
NF
NF
G
G
NF
a
a
a
C
C
C
(mA)
(mA)
(mA)
100
100
100
20
15
10
5
0
20
15
10
5
0
25
20
15
10
5
0