NE722S01-T1 CEL, NE722S01-T1 Datasheet

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NE722S01-T1

Manufacturer Part Number
NE722S01-T1
Description
RF GaAs C-X Band GaAs MESFET
Manufacturer
CEL
Datasheet

Specifications of NE722S01-T1

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
0.045 S
Gate-source Breakdown Voltage
- 5 V
Continuous Drain Current
30 mA
Power Dissipation
250 mW
Package / Case
SO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE722S01-T1
Manufacturer:
NEC
Quantity:
20 000
FEATURES
• HIGH POWER GAIN:
• OUTPUT POWER (at 1 dB compression):
• LOW NOISE/HIGH GAIN:
• GATE LENGTH: L
• GATE WIDTH: W
ELECTRICAL CHARACTERISTICS
APPLICATIONS
• C to X band low noise amplifiers
• C to X band oscillators
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
GS = 6 dB TYP at f = 12 GHz
15 dB TYP at f = 12 GHz
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
SYMBOLS
P1dB
I
I
V
GSO
DSS
G
NF
Ga
g
GS
m
S
Gate to Source Leak Current, V
Saturated Drain Current, V
Gate to Source Cutoff Voltage, V
Transconductance, V
Power Gain, V
Output Power at 1 dB Gain Compression Point at
V
Noise Figure, V
Associated Gain, V
DS
G
= 3 V, I
G
= 400 µm
= 0.8 µm (recessed gate)
DS
PARAMETERS AND CONDITIONS
DS
= 30 mA, f = 12 GHz
DS
= 3 V, I
PACKAGE OUTLINE
= 3 V, I
DS
PART NUMBER
DS
= 3 V, I
= 3 V, I
DS
N-CHANNEL GaAs MES FET NE722S01
DS
DS
= 30 mA, f = 12 GHz
= 10 mA, f = 4 GHz
= 3 V, V
DS
GS
DS
= 10 mA, f = 4 GHz
DS
= -5 V
= 30 mA
= 3 V, I
(T
GS
A
= 25°C)
= 0 V
D
NEC's C TO X BAND
= 100 µA
OUTLINE DIMENSION
UNITS
dBm
0.125 ± 0.05
mA
mS
uA
dB
dB
dB
V
2
California Eastern Laboratories
PACKAGE OUTLINE SO1
MIN
-0.5
60
20
1.9 ± 0.2
1
2.0 ± 0.2
0.65 TYP
4.0 ± 0.2
P
1.6
0.4 MAX
3
NE722S01
(Units in mm)
S01
TYP
15.0
1.0
0.9
90
45
12
6
1.5 MAX
4
0.5
TYP
2.0±0.2
1. Source
2. Drain
3. Source
4. Gate
MAX
120
-4.0
10
_

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NE722S01-T1 Summary of contents

Page 1

... RF and DC performance and uniformity. This device's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel. NEC's stringent quality assurance and test procedures ensure the highest reliability performance ...

Page 2

... DSS mW 250 mW 40 ORDERING INFORMATION °C 125 PART NUMBER °C -65 to +125 NE722S01-T1 NE722S01-T1B Note: 1. Available if quantity is over 100k per month (T = 25°C) A 100 200 250 (° ( 25°C) A PART NUMBER PARAMETERS UNITS MIN TYP MAX Drain to Source Voltage V Drain Current ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER vs. INPUT POWER 3 GHz -10 -15 - Input Power, P (dBm) in ...

Page 4

... NE722S01 TYPICAL SCATTERING PARAMETERS NE722S01 FREQUENCY S 11 GHz MAG ANG 2.0 0.912 -44.0 2.5 0.876 -56.1 3.0 0.828 -68.0 3.5 0.784 -79.3 4.0 0.737 -89.5 4.5 0.699 -99.3 5.0 0.660 -109.0 5.5 0.620 -119.0 6.0 0.583 -130.6 6.5 0.547 -143.8 7 ...

Page 5

... TYPICAL SCATTERING PARAMETERS NE722S01 FREQUENCY S 11 GHz MAG ANG 2.0 0.896 -48.3 2.5 0.851 -61.5 3.0 0.799 -74.1 3.5 0.753 -86.1 4.0 0.705 -97.0 4.5 0.666 -107.3 5.0 0.625 -117.5 5.5 0.586 -128.3 6.0 0.553 -140.6 6.5 0.521 -154.2 7.0 ...

Page 6

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

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