NE856M13-T3-A CEL, NE856M13-T3-A Datasheet
NE856M13-T3-A
Manufacturer Part Number
NE856M13-T3-A
Description
RF Bipolar Small Signal NPN Silicon Amp Oscillatr Transistor
Manufacturer
CEL
Datasheet
1.NE856M13-A.pdf
(2 pages)
Specifications of NE856M13-T3-A
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
The NE856M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
• NEW MINIATURE M13 PACKAGE:
• LOW NOISE FIGURE:
• HIGH COLLECTOR CURRENT:
DESCRIPTION
SYMBOLS
– Small transistor outline –
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
NF = 1.4 dB at 1 GHz
I
C
|S
C
1.0 X 0.5 X 0.5 mm
MAX = 100 mA
h
I
I
NF
CBO
EBO
21E
f
FE 2
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
CE
350 s, duty cycle
PARAMETERS AND CONDITIONS
= 3 V, I
CE
EIAJ
NPN SILICON TRANSISTOR
= 3 V, I
PRELIMINARY DATA SHEET
CE
1
PACKAGE OUTLINE
CE
EB
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 3 V, I
= 7 mA, f = 1 GHz
= 3 V, I
= 1 V, I
C
= 3 V, I
= 10 V, I
= 7 mA, f = 1 GHz
(T
C
A
C
C
= 7 mA, f = 1 GHz
E
= 25 C)
= 7 mA
= 0
2 %.
= 0, f = 1 MHz
E
= 0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
1.0
+0.1
–0.05
0.5 0.05
0.1
2
1
California Eastern Laboratories
0.5
UNITS
+0.1
–0.05
GHz
dB
dB
pF
A
A
PACKAGE OUTLINE M13
3
0.125
0.1
+0.1
–0.05
MIN
0.7
80
3
7
0.15
0.35
0.35
NE856M13
0.15
+0.1
–0.05
(Units in mm)
+0.1
–0.05
NE856M13
2SC5614
1
2
M13
TYP
4.5
1.4
0.7
Bottom View
10
0.3
0.2
3
MAX
145
2.5
1.5
0.2
1
1
0.2
+0.1
–0.05
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NE856M13-T3-A Summary of contents
Page 1
... I MAX = 100 mA C DESCRIPTION The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles ...
Page 2
... EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ...